= 1 M鈩?/div>
Continuous
Transient
T
C
= 25擄C
T
C
= 25擄C, pulse width limited by T
JM
T
C
= 25擄C
35N30
40N30
35N30
40N30
Maximum Ratings
300
300
鹵20
鹵30
35
40
140
160
300
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
W
擄C
擄C
擄C
TO-247 AD (IXTH)
D (TAB)
TO-204 AE (IXTM)
D
G = Gate,
S = Source,
G
D = Drain,
TAB = Drain
Mounting torque
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
300
擄C
Features
International standard packages
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Low package inductance (< 5 nH)
- easy to drive and to protect
Fast switching times
l
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
300
2
4
鹵100
T
J
= 25擄C
T
J
= 125擄C
200
1
0.10
0.085
0.088
V
V
nA
碌A(chǔ)
mA
Applications
Switch-mode and resonant-mode
power supplies
Motor controls
Uninterruptible Power Supplies (UPS)
DC choppers
l
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
碌A(chǔ)
V
DS
= V
GS
, I
D
= 250
碌A(chǔ)
V
GS
=
鹵20
V
DC
, V
DS
= 0
V
DS
= 0.8 鈥?V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 I
D25
IXYS reserves the right to change limits, test conditions, and dimensions.
漏 2000 IXYS All rights reserved
l
l
IXTH35N30
IXTH40N30
IXTM40N30
Pulse test, t
鈮?/div>
300
碌s,
duty cycle d
鈮?/div>
2 %
鈩?/div>
鈩?/div>
鈩?/div>
Advantages
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
l
l
l
l
l
l
l
l
91535E(5/96)
1-4
IXTH40N30 產(chǎn)品屬性
30
分離式半導(dǎo)體產(chǎn)品
FET - 單
MegaMOS™
MOSFET N 通道，金屬氧化物
標(biāo)準(zhǔn)型
300V
40A
85 毫歐 @ 500mA，10V
4V @ 250µA
220nC @ 10V
4600pF @ 25V
300W
通孔
TO-247-3
TO-247AD
管件
IXTH40N30相關(guān)型號PDF文件下載
-
型號
版本
描述
廠商
下載
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 950V V(BR)DSS | 5A I(D) | ...
ETC
-
英文版
N-Channel Enhancement Mode
-
英文版
N-Channel Enhancement Mode
IXYS [IXYS...
-
英文版
Standard Power MOSFET
-
英文版
Standard Power MOSFET
IXYS [IXYS...
-
英文版
TRANSISTOR | MOSFET | P-CHANNEL | 450V V(BR)DSS | 7A I(D) | ...
ETC
-
英文版
Standard Power MOSFET P-Channel Enhancement Mode Avalanche R...
-
英文版
MOSFET P-CH 500V 7A TO-247AD
-
英文版
Standard Power MOSFET P-Channel Enhancement Mode Avalanche R...
IXYS [IXYS...
-
英文版
TRANSISTOR | MOSFET | P-CHANNEL | 450V V(BR)DSS | 8A I(D) | ...
ETC
-
英文版
Standard Power MOSFET P-Channel Enhancement Mode Avalanche R...
-
英文版
MOSFET P-CH 500V 8A TO-247
-
英文版
Standard Power MOSFET P-Channel Enhancement Mode Avalanche R...
IXYS [IXYS...
-
英文版
Standard Power MOSFET - P-Channel Enhancement Mode Avalanche...
IXYS [IXYS...
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 950V V(BR)DSS | 9A I(D) | ...
ETC
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 10A I(D) |...
ETC
-
英文版
10 AMP, 600V, 0.55-ohm / 0.7-ohm
IXYS [IXYS...
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 10A I(D) |...
ETC
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 10A I(D) |...
ETC
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 950V V(BR)DSS | 10A I(D) |...
ETC
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