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ADVANCE TECHNICAL INFORMATION

Power MOSFET

ISOPLUS220

TM

Electrically Isolated Back Surface

N-Channel Enhancement Mode

High dv/dt, Low t

rr

, HDMOS

TM

Family

IXTC 13N50

V

DSS

= 500 V

I

D25

= 12 A

R

DS(on)

= 0.4

鈩?/div>

ISOPLUS 220

TM

Symbol

V

DSS

V

DGR

V

GS

V

GSM

I

D25

I

DM

I

AR

E

AR

dv/dt

P

D

T

J

T

JM

T

stg

T

L

Weight

1.6 mm (0.062 in.) from case for 10 s

Test Conditions

T

J

= 25擄C to 150擄C

T

J

= 25擄C to 150擄C; R

GS

= 1 M鈩?/div>

Continuous

Transient

T

C

= 25擄C

T

C

= 25擄C, pulse width limited by T

JM

T

C

= 25擄C

T

C

= 25擄C

I

S

鈮?/div>

I

DM

, di/dt

鈮?/div>

100 A/碌s, V

DD

鈮?/div>

V

DSS

,

T

J

鈮?/div>

150擄C, R

G

= 2

鈩?/div>

T

C

= 25擄C

Maximum Ratings

500

鹵20

鹵30

12

48

13

18

5

140

-55 ... +150

150

-55 ... +150

300

3

V

A

mJ

V/ns

W

擄C

g

l

G

D

S

G = Gate,

S = Source

* Patent pending

Isolated back surface*

D = Drain,

Features

l

Silicon chip on Direct-Copper-Bond

substrate

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

Low drain to tab capacitance(<35pF)

Low R

DS (on)

HDMOS

TM

process

Rugged polysilicon gate cell structure

Unclamped Inductive Switching (UIS)

rated

Applications

l

Symbol

Test Conditions

Characteristic Values

(T

J

= 25擄C, unless otherwise specified)

min. typ. max.

500

2

4

鹵100

T

J

= 25擄C

T

J

= 125擄C

200

1

0.4

V

l

V

DSS

V

GS(th)

I

GSS

I

DSS

R

DS(on)

V

GS

= 0 V, I

D

= 250

碌A(chǔ)

V

DS

= V

GS

, I

D

= 2.5 mA

V

GS

=

鹵20

V

DC

, V

DS

= 0

V

DS

= 0.8 V

DSS

V

GS

= 0 V

V

GS

= 10 V, I

D

= I

T

Notes 1, 2

l

DC-DC converters

Batterychargers

Switched-mode and resonant-mode

power supplies

DC choppers

AC motor control

Advantages

nA

碌A(chǔ)

mA

鈩?/div>

l

Easy assembly: no screws or isolation

foils required

Space savings

High power density

Low collector capacitance to ground

(low EMI)

98823 (05/01)

標(biāo)準(zhǔn)包裝
50
類別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 單
系列
-
FET 型
MOSFET N 通道，金屬氧化物
FET 特點(diǎn)
標(biāo)準(zhǔn)型
漏極至源極電壓(Vdss)
500V
電流 - 連續(xù)漏極(Id) @ 25° C
12A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
400 毫歐 @ 6.5A，10V
Id 時(shí)的 Vgs(th)（最大）
4V @ 2.5mA
閘電荷(Qg) @ Vgs
120nC @ 10V
輸入電容 (Ciss) @ Vds
2800pF @ 25V
功率 - 最大
140W
安裝類型
通孔
封裝/外殼
ISOPLUS220?
供應(yīng)商設(shè)備封裝
ISOPLUS220?
包裝
管件

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