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IXTA8N50P Datasheet

  • IXTA8N50P

  • PolarHV Power MOSFET N-Channel Enhancement Mode Avalanche Ra...

  • 228.30KB

  • 5頁

  • IXYS   IXYS

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PolarHV
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA 8N50P
IXTP 8N50P
V
DSS
I
D25
R
DS(on)
= 500
=
8
鈮?/div>
0.8
V
A
鈩?/div>
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Test Conditions
T
J
= 25擄 C to 150擄 C
T
J
= 25擄 C to 150擄 C; R
GS
= 1 M鈩?/div>
Continuous
Transient
T
C
= 25擄 C
T
C
= 25擄 C, pulse width limited by T
JM
T
C
= 25擄 C
T
C
= 25擄 C
T
C
= 25擄 C
I
S
鈮?/div>
I
DM
, di/dt
鈮?/div>
100 A/碌s, V
DD
鈮?/div>
V
DSS
,
T
J
鈮?/div>
150擄 C, R
G
= 18
鈩?/div>
T
C
= 25擄 C
Maximum Ratings
500
500
鹵30
鹵40
8
14
8
20
400
10
150
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
mJ
V/ns
W
擄C
擄C
擄C
擄C
擄C
TO-263 (IXTA)
G
S
(TAB)
TO-220 (IXTP)
G
D S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
TO-220
TO-263
(TO-220)
300
260
1.13/10 Nm/lb.in.
4
3
g
g
Features
l
l
l
Symbol
Test Conditions
(T
J
= 25擄 C unless otherwise specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
碌A(chǔ)
V
DS
= V
GS
, I
D
= 100碌A(chǔ)
V
GS
=
鹵30
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 125擄 C
Characteristic Values
Min. Typ.
Max.
500
3.0
5.5
鹵100
5
50
0.8
V
V
nA
碌A(chǔ)
碌A(chǔ)
鈩?/div>
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
l
l
l
Easy to mount
Space savings
High power density
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
鈮?/div>
300
碌s,
duty cycle d
鈮?/div>
2 %
漏 2006 IXYS All rights reserved
DS99321E(03/06)

IXTA8N50P 產(chǎn)品屬性

  • 50

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • PolarHV™

  • MOSFET N 通道，金屬氧化物

  • 標準型

  • 500V

  • 8A

  • 800 毫歐 @ 4A，10V

  • 5.5V @ 100µA

  • 20nC @ 10V

  • 1050pF @ 25V

  • 150W

  • 表面貼裝

  • TO-263-3，D²Pak（2 引線+接片），TO-263AB

  • TO-263

  • 管件

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