High Voltage
IGBT with Diode
Short Circuit SOA Capability
Preliminary data sheet
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
t
SC
(SCSOA)
P
C
T
J
T
JM
T
stg
T
L
Weight
1.6 mm (0.063 in) from case for 10 s
TO-264
PLUS247
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GE
= 1 MW
Continuous
Transient
T
C
= 25擄C
T
C
= 90擄C
T
C
= 25擄C, 1 ms
V
GE
= 15 V, T
J
= 125擄C, R
G
= 5
W
Clamped inductive load
V
GE
= 15 V, V
CE
= 720 V, T
J
= 125擄C
R
G
= 5
W,
non repetitive
T
C
= 25擄C
IGBT
Diode
IXSK 35N120BD1
IXSX 35N120BD1
V
CES
=
1200 V
I
C25
=
70 A
V
CE(SAT)
=
3.6 V
Maximum Ratings
1200
1200
鹵20
鹵30
70
35
140
I
CM
= 90
@ 0.8 V
CES
10
300
190
-55 ... +150
150
-55 ... +150
300
10
6
V
V
V
V
A
A
A
A
m
s
W
W
擄C
擄C
擄C
擄C
g
g
TO-264 AA
(IXSK)
G
C
TM
E
PLUS TO-247
(IXSX)
G
G = Gate,
E = Emitter,
C (TAB)
C
E
C = Collector,
TAB = Collector
Features
聲
Hole-less TO-247 package for clip
mounting
聲
High frequency IGBT and anti-parallel
FRED in one package
聲
Low V
CE(sat)
- for minimum on-state conduction
losses
聲
MOS Gate turn-on
- drive simplicity
聲
Fast Recovery Epitaxial Diode (FRED)
- soft recovery with low I
RM
Applications
聲
AC motor speed control
聲
DC servo and robot drives
聲
DC choppers
聲
Uninterruptible power supplies (UPS)
聲
Switch-mode and resonant-mode
power supplies
Advantages
聲
Space savings (two devices in one
package)
聲
Reduces assembly time and cost
聲
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
1200
3
T
J
= 125擄C
6
1
3
鹵100
3.6
V
V
mA
mA
nA
V
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
聛
I
C
I
C
= 3 mA, V
GE
= 0 V
= 250
mA,
V
CE
= V
GE
V
CE
= 0.8 聲 V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
鹵20
V
I
C
= I
C90
, V
GE
= 15 V
聛
Device must be heatsunk for high temperature measurements to avoid thermal runaway.
IXYS reserves the right to change limits, test conditions and dimensions
漏 2000 IXYS All rights reserved
98733 (7/00)
IXYS
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