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IXST30N60CD1 Datasheet

  • IXST30N60CD1

  • Short Circuit SOA Capability

  • 2頁

  • IXYS   IXYS

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High Speed IGBT with Diode
IXSH 30 N60CD1
IXSK 30 N60CD1
IXST 30 N60CD1
Short Circuit SOA Capability
Preliminary data
V
CES
I
C25
V
CE(sat)
t
fi
TO-247AD
(IXSH)
=
=
=
=
600 V
55 A
2.5 V
70 ns
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
t
SC
(SCSOA)
P
C
T
J
T
JM
T
stg
M
d
Weight
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GE
= 1 MW
Continuous
Transient
T
C
= 25擄C
T
C
= 90擄C
T
C
= 25擄C, 1 ms
V
GE
= 15 V, T
J
= 125擄C, R
G
= 10
W
Clamped inductive load, V
CL
= 0.8 V
CES
V
GE
= 15 V, V
CE
= 360 V, T
J
= 125擄C
R
G
= 33
W,
non repetitive
T
C
= 25擄C
Maximum Ratings
G
600
600
鹵20
鹵30
55
30
110
I
CM
= 60
10
200
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
ms
W
擄C
擄C
擄C
TO-264
(IXSK)
C
E
TO-268 (D3)
(IXST)
C
G
E
G
C
E
C = Collector
TAB = Collector
G = Gate
E = Emitter
Features
鈥?International standard packages:
JEDEC TO-247, TO-264& TO-268
鈥?Short Circuit SOA capability
鈥?High freqeuncy IGBT and anti-
parallel FRED in one package
鈥?New generation HDMOS
TM
process
Applications
Mounting torque
1.13/10 Nm/lb.in.
6
300
g
擄C
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
600
4
T
J
= 25擄C
T
J
= 125擄C
7
200
3
鹵100
I
C
= I
C90
2.5
V
V
mA
mA
nA
V
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 750
mA,
V
GE
= 0 V
= 2.5 mA, V
CE
= V
GE
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
鈥?Space savings (two devices in one
package)
鈥?Easy to mount with 1 screw
(isolated mounting screw hole)
鈥?Surface mountable, high power case
style
鈥?Reduces assembly time and cost
鈥?High power density
V
CE
= 0.8 鈥?V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
鹵20
V
V
GE
= 15 V
IXYS reserves the right to change limits, test conditions, and dimensions.
98518A (7/00)
漏 2000 IXYS All rights reserved
1-2

IXST30N60CD1 產(chǎn)品屬性

  • 30

  • 分離式半導體產(chǎn)品

  • IGBT - 單路

  • -

  • -

  • 600V

  • 2.5V @ 15V，30A

  • 55A

  • 200W

  • 標準型

  • 表面貼裝

  • TO-268-3，D³Pak（2 引線+接片），TO-268AA

  • TO-268

  • 管件

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