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IXSN35N120AU1 Datasheet

  • IXSN35N120AU1

  • High Voltage IGBT with Diode

  • 4頁(yè)

  • IXYS   IXYS

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High Voltage
IGBT with Diode
IXSN 35N120AU1
V
CES
I
C25
V
CE(sat)
3
2
= 1200 V
= 70 A
= 4V
4
1
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
t
SC
(SCSOA)
P
C
P
D
V
ISOL
T
J
T
JM
T
stg
M
d
Weight
Symbol
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GE
= 1 MW
Continuous
Transient
T
C
= 25擄C
T
C
= 90擄C
T
C
= 25擄C, 1 ms
V
GE
= 15 V, T
VJ
= 125擄C, R
G
= 22
W
Clamped inductive load, L = 30
mH
V
GE
= 15 V, V
CE
= 0.6 鈥?V
CES
, T
J
= 125擄C
R
G
= 22
W,
non repetitive
T
C
= 25擄C
50/60 Hz
I
ISOL
1 mA
IGBT
Diode
t = 1 min
t=1s
Maximum Ratings
1200
1200
鹵20
鹵30
70
35
140
I
CM
= 70
@ 0.8 V
CES
10
300
175
2500
3000
-55 ... +150
150
-55 ... +150
V
A
V
V
A
A
A
A
ms
W
W
V~
V~
擄C
擄C
擄C
miniBLOC, SOT-227 B
1
2
4
3
1 = Emitter
聛,
2 = Gate,
3 = Collector
4 = Emitter
Either Emitter terminal can be used as
Main or Kelvin Emitter
Features
q
q
q
q
q
q
Mounting torque
Terminal connection torque (M4)
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
q
International standard package
miniBLOC (ISOTOP) compatible
Aluminium-nitride isolation
- high power dissipation
Isolation voltage 3000 V~
Low V
CE(sat)
- for minimum on-state conduction
losses
Fast Recovery Epitaxial Diode
- short t
rr
and I
RM
Low collector-to-case capacitance
(< 50 pF)
- reducesd RFI
Low package inductance (< 10 nH)
- easy to drive and to protect
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
1200
4
T
J
= 25擄C
T
J
= 125擄C
8
750
15
鹵100
4
V
V
mA
mA
nA
Applications
q
q
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 5 mA, V
GE
= 0 V
= 4 mA, V
CE
= V
GE
q
q
q
V
CE
= 0.8 鈥?V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
鹵20
V
I
C
= I
C90
, V
GE
= 15 V
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
q
V
q
q
Space savings
Easy to mount with 2 screws
High power density
Device must be heat sunk during high temperature leackage test to avoid thermal runaway.
IXYS reserves the right to change limits, test conditions, and dimensions.
92519E (12/96)
漏 2000 IXYS All rights reserved
1-4

IXSN35N120AU1 產(chǎn)品屬性

  • 10

  • 半導(dǎo)體模塊

  • IGBT

  • -

  • PT

  • 單一

  • 1200V

  • 4V @ 15V,35A

  • 70A

  • 750µA

  • 3.9nF @ 25V

  • 300W

  • 標(biāo)準(zhǔn)型

  • 無(wú)

  • 底座安裝

  • SOT-227-4,miniBLOC

  • SOT-227B

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