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IXSN35N100U1 Datasheet

  • IXSN35N100U1

  • IGBT with Diode - High Short Circuit SOA Capability

  • 6頁(yè)

  • IXYS   IXYS

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IGBT with Diode
IXSN 35N100U1
V
CES
I
C25
V
CE(sat)
= 1000 V
= 38 A
= 3.5 V
High Short Circuit SOA Capability
3
2
4
1
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
t
SC
(SCSOA)
P
C
V
ISOL
T
J
T
JM
T
stg
M
d
Weight
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GE
= 1 M鈩?/div>
Continuous
Transient
T
C
= 25擄C
T
C
= 90擄C
T
C
= 25擄C, 1 ms
V
GE
= 15 V, T
VJ
= 125擄C, R
G
= 22
鈩?/div>
Clamped inductive load, L = 30
碌H
V
GE
= 15 V, V
CE
= 0.6 鈥?V
CES
, T
J
= 125擄C
R
G
= 22
鈩?
non repetitive
T
C
= 25擄C
50/60 Hz
I
ISOL
鈮?/div>
1 mA
t = 1 min
t=1s
Maximum Ratings
1000
1000
鹵20
鹵30
38
25
50
I
CM
= 50
@ 0.8 V
CES
10
205
2500
3000
-40 ... +150
150
-40 ... +150
V
A
V
V
A
A
A
A
碌s
W
V~
V~
擄C
擄C
擄C
miniBLOC, SOT-227 B
1
2
4
3
1 = Emitter,
2 = Gate,
3 = Collector
4 = Kelvin Emitter
Mounting torque
Terminal connection torque (M4)
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
1000
5
T
J
= 25擄C
T
J
= 125擄C
8
750
15
鹵500
3.5
V
V
碌A(chǔ)
mA
nA
V
Features
International standard package
miniBLOC (ISOTOP) compatible
Isolation voltage 3000 V~
2nd generation HDMOS
TM
process
- for high short circuit SOA
Low V
CE(sat)
- for minimum on-state conduction
losses
MOS Gate turn-on
- drive simplicity
Fast Recovery Epitaxial Diode
(FRED)
- short t
rr
and I
RM
Low collector-to-case capacitance
(< 50 pF)
- reducesd RFI
Low package inductance (< 10 nH)
- easy to drive and to protect
q
q
q
q
q
q
q
q
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 6 mA, V
GE
= 0 V
= 10 mA, V
CE
= V
GE
V
CE
= 0.8 鈥?V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
鹵20
V
I
C
= I
C90
, V
GE
= 15 V
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
q
q
q
q
q
q
q
q
Advantages
Space savings
Easy to mount with 2 screws
High power density
93005C (7/94)
IXYS reserves the right to change limits, test conditions and dimensions.
漏 IXYS Corporation. All rights reserved.
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: 408-982-0700, Fax: 408-496-0670
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627

IXSN35N100U1 產(chǎn)品屬性

  • 10

  • 半導(dǎo)體模塊

  • IGBT

  • -

  • -

  • 單一

  • 1000V

  • 3.5V @ 15V，25A

  • 38A

  • 750µA

  • 4.5nF @ 25V

  • 205W

  • 標(biāo)準(zhǔn)型

  • 無(wú)

  • 底座安裝

  • SOT-227-4，miniBLOC

  • SOT-227B

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