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IXSK35N120AU1 Datasheet

  • IXSK35N120AU1

  • High Voltage IGBT with Diode

  • 43.63KB

  • 2頁

  • IXYS   IXYS

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High Voltage
IGBT with Diode
Combi Pack
Short Circuit SOA Capability
IXSK35N120AU1
V
CES
I
C25
V
CE(sat)
= 1200 V
=
70 A
=
4V
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
t
SC
(SCSOA)
P
C
T
J
T
JM
T
stg
T
L
M
d
Weight
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GE
= 1 MW
Continuous
Transient
T
C
= 25擄C
T
C
= 90擄C
T
C
= 25擄C, 1 ms
V
GE
= 15 V, T
J
= 125擄C, R
G
= 22
W
Clamped inductive load, L = 30
mH
V
GE
= 15 V, V
CE
= 720 V, T
J
= 125擄C
R
G
= 22
W,
non repetitive
T
C
= 25擄C
IGBT
Diode
Maximum Ratings
1200
1200
鹵20
鹵30
70
35
140
I
CM
= 70
@ 0.8 V
CES
10
300
190
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
ms
W
W
擄C
擄C
擄C
擄C
Nm/lb.in.
g
TO-264 AA
C (TAB)
G
C
E
C = Collector,
TAB = Collector
G = Gate,
E = Emitter,
Features
鈥?International standard package
JEDEC TO-264 AA
鈥?High frequency IGBT and anti-parallel
FRED in one package
鈥?2nd generation HDMOS
TM
process
鈥?Low V
CE(sat)
- for minimum on-state conduction
losses
鈥?MOS Gate turn-on
- drive simplicity
鈥?Fast Recovery Epitaxial Diode (FRED)
- soft recovery with low I
RM
Applications
1.6 mm (0.063 in) from case for 10 s
Mounting torque
300
1.15/13
10
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
1200
4
T
J
= 25擄C
T
J
= 125擄C
8
750
15
鹵100
4
V
V
mA
mA
nA
V
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 5 mA, V
GE
= 0 V
= 4 mA, V
CE
= V
GE
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
V
CE
= 0.8 鈥?V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
鹵20
V
I
C
= I
C90
, V
GE
= 15 V
Advantages
鈥?Space savings (two devices in one
package)
鈥?Easy to mount with one screw
(isolated mounting screw hole)
鈥?High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
94526F(7/00)
漏 2000 IXYS All rights reserved
1-2

IXSK35N120AU1 產(chǎn)品屬性

  • 25

  • 分離式半導(dǎo)體產(chǎn)品

  • IGBT - 單路

  • -

  • -

  • 1200V

  • 4V @ 15V，35A

  • 70A

  • 300W

  • 標(biāo)準(zhǔn)型

  • 通孔

  • TO-264-3，TO-264AA

  • TO-264AA

  • 散裝

  • Q2524153

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