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IXSH30N60U1 Datasheet

  • IXSH30N60U1

  • Low VCE(sat) IGBT with Diode High Speed IGBT with Diode Comb...

  • 6頁

  • IXYS   IXYS

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V
CES
Low V
CE(sat)
IGBT with Diode
High Speed IGBT with Diode
Combi Packs
Short Circuit SOA Capability
IXSH 30 N60U1
IXSH 30 N60AU1
600 V
600 V
I
C25
50 A
50 A
V
CE(sat)
2.5 V
3.0 V
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
t
SC
(SCSOA)
P
C
T
J
T
JM
T
stg
M
d
Weight
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GE
= 1 MW
Continuous
Transient
T
C
= 25擄C
T
C
= 90擄C
T
C
= 25擄C, 1 ms
V
GE
= 15 V, T
J
= 125擄C, R
G
= 33
W
Clamped inductive load, L = 100
mH
V
GE
= 15 V, V
CE
= 360 V, T
J
= 125擄C
R
G
= 33
W,
non repetitive
T
C
= 25擄C
Maximum Ratings
600
600
鹵20
鹵30
50
30
100
I
CM
= 60
@ 0.8 V
CES
10
200
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
TO-247 AD
G
C
E
C = Collector,
TAB = Collector
G = Gate,
E = Emitter,
Features
ms
W
擄C
擄C
擄C
鈥?International standard package
JEDEC TO-247 AD
鈥?High frequency IGBT with guaranteed
Short Circuit SOA capability
鈥?IGBT and anti-parallel FRED in one
package
鈥?2nd generation HDMOS
TM
process
鈥?Low V
CE(sat)
- for low on-state conduction losses
鈥?MOS Gate turn-on
- drive simplicity
Applications
Mounting torque
1.13/10 Nm/lb.in.
6
300
g
擄C
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
600
5
T
J
= 25擄C
T
J
= 125擄C
8
500
8
鹵100
30N60U1
30N60AU1
2.5
3.0
V
V
mA
mA
nA
V
V
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 750
mA,
V
GE
= 0 V
= 2.5 mA, V
CE
= V
GE
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
V
CE
= 0.8 鈥?V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
鹵20
V
I
C
= I
C90
, V
GE
= 15 V
Advantages
鈥?Space savings (two devices in one
package)
鈥?Easy to mount with 1 screw
(isolated mounting screw hole)
鈥?Reduces assembly time and cost
鈥?High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
92714F (12/96)
漏 2000 IXYS All rights reserved
1-6

IXSH30N60U1 產(chǎn)品屬性

  • 30

  • 分離式半導體產(chǎn)品

  • IGBT - 單路

  • -

  • -

  • 600V

  • 2.5V @ 15V，30A

  • 50A

  • 200W

  • 標準型

  • 通孔

  • TO-247-3

  • TO-247AD

  • 管件

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