High Speed IGBT with Diode
IXSH 30N60BD1
IXSK 30N60BD1
IXST 30N60BD1
V
CES
I
C25
V
CE(sat)
Short Circuit SOA Capability
t
fi
= 600 V
= 55 A
= 2.0 V
= 140 ns
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
t
SC
(SCSOA)
P
C
T
J
T
JM
T
stg
M
d
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GE
= 1 MW
Continuous
Transient
T
C
= 25擄C
T
C
= 90擄C
T
C
= 25擄C, 1 ms
V
GE
= 15 V, T
J
= 125擄C, R
G
= 10
W
Clamped inductive load, V
CL
= 0.8 V
CES
V
GE
= 15 V, V
CE
= 360 V, T
J
= 125擄C
R
G
= 33
W,
non repetitive
T
C
= 25擄C
Maximum Ratings
600
600
鹵20
鹵30
55
30
110
I
CM
= 60
10
200
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
ms
W
擄C
擄C
擄C
擄C
g
g
TO-247AD
(IXSH)
G
C
E
TO-268 (D3)
(IXST)
G
E
C
TO-264
(IXSK)
G
C
E
C = Collector
TAB = Collector
G = Gate
E = Emitter
Mounting torque
1.13/10 Nm/lb.in.
300
TO-247/TO-268
TO-264
6/4
10
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Weight
Features
鈥?International standard packages:
JEDEC TO-247, TO-264& TO-268
鈥?Short Circuit SOA capability
鈥?Medium freqeuncy IGBT and anti-
parallel FRED in one package
鈥?New generation HDMOS
TM
process
Applications
鈥?AC motor speed control
鈥?DC servo and robot drives
鈥?DC choppers
鈥?Uninterruptible power supplies (UPS)
鈥?Switch-mode and resonant-mode
power supplies
Advantages
鈥?Space savings (two devices in one
package)
鈥?Easy to mount with 1 screw
(isolated mounting screw hole)
鈥?Surface mountable, high power case
style
鈥?Reduces assembly time and cost
鈥?High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
600
4
T
J
= 25擄C
T
J
= 125擄C
7
200
3
鹵100
I
C
= I
C90
I
C
= I
C25
2.0
2.7
V
V
mA
mA
nA
V
V
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 750
mA,
V
GE
= 0 V
= 2.5 mA, V
CE
= V
GE
V
CE
= 0.8 鈥?V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
鹵20
V
V
GE
= 15 V
IXYS reserves the right to change limits, test conditions, and dimensions.
98517A (7/00)
漏 2000 IXYS All rights reserved
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