IGBT with Diode
IXSH25N120AU1
"S" Series - Improved SCSOA Capability
C
G
I
C25
=
50 A
V
CES
= 1200 V
V
CE(sat)
= 4.0 V
E
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
t
sc
P
C
T
J
T
JM
T
STG
M
d
Weight
Max. Lead Temperature for
Soldering
(1.6mm from case for 10s)
Mounting torque
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GE
= 1 MW
Continuous
Transient
T
C
= 25擄C
T
C
= 90擄C
T
C
= 25擄C, 1 ms
V
GE
= 15 V, T
J
= 125擄C, R
G
= 33
W
Clamped inductive load, L = 100 碌H
T
J
= 125潞C, V
CE
= 720 V; V
GE
= 15V, R
G
= 33W
T
C
= 25擄C
Maximum Ratings
1200
1200
鹵20
鹵30
50
25
80
I
CM
= 50
@ 0.8 V
CES
10
200
-55 ... +150
150
-55 ... +150
碌s
W
擄C
擄C
擄C
V
V
V
V
A
A
A
A
Features
鈥?High frequency IGBT with guaranteed
short circuit SOA capability.
鈥?IGBT with anti-parallel diode in one
package
鈥?2
nd
generation HDMOS
TM
process
Low V
CE(sat)
- for minimum on-state conduction
losses
鈥?MOS Gate turn-on
- drive simplicity
Applications
鈥?AC motor speed control
鈥?DC servo and robot drives
鈥?Uninterruptible power supplies
(UPS)
鈥?Switched-mode and resonant-mode
power supplies
鈥?DC choppers
Advantages
鈥?Saves space (two devices in one
package)
鈥?Easy to mount (isolated mounting
hole)
鈥?Reduces assembly time and cost
鈥?Operates cooler
鈥?Easier to assemble
G
E
C
TO-247 AD
1.15/10 Nm/lb-in.
6
300
g
擄C
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C unless otherwise specified)
Min.
Typ.
Max.
1200
4
T
J
= 25擄C
T
J
= 125擄C
8
V
V
BV
CES
V
GE(th)
I
CES
I
C
I
C
= 4 mA, V
GE
= 0 V
= 2.5 mA, V
CE
= V
GE
V
CE
= 0.8 V
CES
, V
GE
= 0 V
Note 2
500
mA
8 mA
+ 100 nA
4.0
V
I
GES
V
CE(sat)
V
CE
= 0 V, V
GE
= 鹵20 V
I
C
= I
C90
, V
GE
= 15 V
IXYS reserves the right to change limits, test conditions, and dimensions.
94521C(7/00)
漏 2000 IXYS All rights reserved
1-2
1
2
