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IXSH20N60U1 Datasheet

  • IXSH20N60U1

  • Low VCE(sat) IGBT with Diode, High Speed IGBT with Diode

  • 6頁

  • IXYS   IXYS

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上傳產(chǎn)品規(guī)格書

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Not for new designs
Low V
CE(sat)
IGBT with Diode
High Speed IGBT with Diode
Combi Packs
Short Circuit SOA Capability
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
t
SC
(SCSOA)
P
C
T
J
T
JM
T
stg
M
d
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
Mounting torque
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GE
= 1 M鈩?/div>
Continuous
Transient
T
C
= 25擄C
T
C
= 90擄C
T
C
= 25擄C, 1 ms
V
GE
= 15 V, T
J
= 125擄C, R
G
= 82
鈩?/div>
Clamped inductive load, L = 100
碌H
V
GE
= 15 V, V
CE
= 360 V, T
J
= 125擄C
R
G
= 82
鈩?
non repetitive
T
C
= 25擄C
Maximum Ratings
600
600
鹵20
鹵30
40
20
80
I
CM
= 40
@ 0.8 V
CES
10
150
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
碌s
W
擄C
擄C
擄C
V
CES
IXSH 20 N60U1
IXSH 20 N60AU1
600 V
600 V
I
C25
40 A
40 A
V
CE(sat)
2.5 V
3.0 V
TO-247 AD
G
C
E
C = Collector,
TAB = Collector
G = Gate,
E = Emitter,
Features
International standard package
JEDEC TO-247 AD
High frequency IGBT with
guaranteed
Short Circuit SOA capability
IGBT and anti-parallel FRED in one
package
2nd generation HDMOS
TM
process
Low V
CE(sat)
- for low on-state conduction losses
MOS Gate turn-on
- drive simplicity
q
q
q
q
q
q
1.13/10 Nm/lb.in.
6
300
g
擄C
Applications
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
600
3.5
T
J
= 25擄C
T
J
= 125擄C
6.5
500
8
鹵100
20N60U1
20N60AU1
2.5
3.0
V
V
碌A(chǔ)
mA
nA
V
V
q
q
q
q
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 1.75 mA, V
GE
= 0 V
= 1.5 mA, V
CE
= V
GE
q
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
V
CE
= 0.8 鈥?V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
鹵20
V
I
C
= I
C90
, V
GE
= 15 V
Advantages
q
q
q
q
Space savings (two devices in one
package)
Easy to mount with 1 screw
(isolated mounting screw hole)
Reduces assembly time and cost
High power density
91770D (4/96)
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: 408-982-0700, Fax: 408-496-0670
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627

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