= 82鈩?/div>
T
C
= 25擄C
Maximum Ratings
1200
1200
鹵20
鹵30
30
15
60
I
CM
= 30
@ 0.8 V
CES
5
150
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
I
C25
=
30 A
V
CES
= 1200 V
V
CE(sat)
= 4.0 V
TO-247AD
C
G
E
碌s
W
擄C
擄C
擄C
Features
鈥?High frequency IGBT with guaranteed
Short Circuit SOA capability.
鈥?IGBT with anti-parallel diode in one
package
鈥?2
nd
generation HDMOS
TM
process
Low V
CE(sat)
- for minimum on-state conduction
losses
鈥?MOS Gate turn-on
- drive simplicity
Applications
鈥?AC motor speed control
鈥?DC servo and robot drives
鈥?Uninterruptible power supplies
(UPS)
鈥?Switched-mode and resonant-mode
power supplies
鈥?DC choppers
Advantages
鈥?Saves space (two devices in one
package)
鈥?Easy to mount (isolated mounting hole)
鈥?Reduces assembly time and cost
鈥?Operates cooler
鈥?Easier to assemble
1.15/10 Nm/lb-in.
6
300
g
擄C
Symbol
Test Conditions
(T
J
= 25擄C unless otherwise specified)
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 4.0 mA, V
GE
= 0 V
= 1.5 mA, V
CE
= V
GE
T
J
= 25擄C
T
J
= 125擄C
Characteristic Values
Min. Typ.
Max.
1200
4
8
V
V
V
CE
= 0.8 V
CES
, V
GE
= 0 V
Note 2
V
CE
= 0 V, V
GE
= 鹵20 V
I
C
= I
C90
, V
GE
= 15 V
500 碌A(chǔ)
8 mA
+ 100 nA
4.0
V
94522B(6/95)
漏 1994 IXYS Corporation. All rights reserved.
IXYS Corporation
3540 Bassett Street; Santa Clara, CA 95054
Tel: 408-982-0700; Fax: 408-496-0670
IXYS Semiconductor GmbH
POB 1180; D-68619; Lampertheim, Germany
Tel: +49-6206-5030; Fax: +49-6206-503627
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