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IXSH10N120AU1 Datasheet

  • IXSH10N120AU1

  • IGBT with Diode

  • 2頁(yè)

  • IXYS   IXYS

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IXSH10N120AU1
PRELIMINARY DATA SHEET
IGBT with Diode
"S" Series - Improved SCSOA Capability
I
C25
= 20 A
V
CES
= 1200 V
V
CE(sat)
= 4.0 V
C
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
t
sc
P
C
T
J
T
JM
T
STG
M
d
Weight
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GE
= 1 M鈩?/div>
Continuous
Transient
T
C
= 25擄C
T
C
= 90擄C
T
C
= 25擄C, 1 ms
V
GE
= 15 V, T
J
= 125擄C, R
G
= 150
鈩?/div>
Clamped inductive load, L = 300 碌H
Maximum Ratings
1200
1200
鹵20
鹵30
20
10
40
I
CM
= 20
@ 0.8 V
CES
5
100
-55 ... +150
150
-55 ... +150
碌s
W
擄C
擄C
擄C
Features
V
V
E
V
V
TO-247AD
A
A
A
A
G
C
G
E
T
J
= 125潞C, V
CE
= 720 V; V
GE
= 15V, R
G
= 150鈩?/div>
T
C
= 25擄C
鈥?/div>
High voltage IGBT with
鈥?/div>
guaranteed short circuit SOA capability.
鈥?/div>
IGBT with anti-parallel diode in one
package
鈥?/div>
2
nd
generation HDMOS
TM
process
Low VCE(sat)
- for minimum on-state conduction
losses
鈥?/div>
MOS Gate turn-on
- drive simplicity
Applications
Mounting torque
.
1.15/10 Nm/lb-in.
6
300
g
擄C
Max. Lead Temperature for
Soldering
(1.6mm from case for 10s)
鈥?/div>
AC motor speed control
鈥?/div>
DC servo and robot drives
鈥?/div>
Uninterruptible power supplies (UPS)
鈥?/div>
Switched-mode and resonant-mode
Symbol
Test Conditions
(T
J
= 25擄C unless otherwise specified)
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 3.25 mA, V
GE
= 0 V
= 750
碌A(chǔ),
V
CE
= V
GE
T
J
= 25擄C
T
J
= 125擄C
Characteristic Values
Min. Typ.
Max.
1200
4
8
400
5
+ 100
4.0
V
V
碌A(chǔ)
mA
nA
V
鈥?/div>
DC choppers
Advantages
power supplies
鈥?/div>
Saves space (two devices in one
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
package
Easy to mount(isolated mounting
hole)
Reduces assembly time and cost
Runs cooler than equivalent
6-pack IGBTs
Easier to package to meet UL
requirements
94523C (1/96)
IXYS Semiconductor GmbH
Edisonstr.15, D-68623 Lampertheim, Germany
Phone: +49-6206-5030 Fax: +49-6206-503627
V
CE
= 0.8 V
CES
,V
GE
= 0 V
Note 2
V
CE
= 0 V, V
GE
= 鹵20 V
I
C
= I
C90
, V
GE
= 15 V
漏1996 IXYS Corporation. All rights reserved.
IXYS Corporation
3540 Bassett Street; Santa Clara, CA 95054
Tel: 408-982-0700; Fax: 408-496-0670

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