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IXSA10N60B2D1 Datasheet

  • IXSA10N60B2D1

  • High Speed IGBT with Diode

  • 6頁(yè)

  • IXYS   IXYS

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High Speed IGBT
with Diode
Short Circuit SOA Capability
Preliminary Data Sheet
IXSA 10N60B2D1
IXSP 10N60B2D1
V
CES
= 600 V
= 20 A
I
C25
V
CE(sat)
= 2.5 V
D1
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C110
I
F(110)
I
CM
SSOA
(RBSOA)
t
SC
(SCSOA)
P
C
T
J
T
JM
T
stg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Plastic Body
t = 10s
M
d
Weight
Mounting torque
(TO-220)
T
C
= 25擄C, 1 ms
V
GE
= 15 V, T
J
= 125擄C, R
G
= 82鈩?/div>
Clamped inductive load, V
GE
= 20 V
V
GE
= 15 V, V
CE
= 360 V, T
J
= 125擄C
R
G
= 150
鈩?
non repetitive
T
C
= 25擄C
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GE
= 1 M鈩?/div>
Continuous
Transient
T
C
= 25擄C
T
C
= 110擄C
Maximum Ratings
600
600
鹵
20
鹵
30
20
10
11
30
I
CM
= 20
@ 0.8 V
CES
10
100
-55 ... +150
150
-55 ... +150
300
250
V
V
V
V
A
A
A
A
A
碌s
W
擄C
擄C
擄C
擄C
擄C
g
Features
鈥?International standard packages
鈥?Guaranteed Short Circuit SOA
capability
鈥?Low V
CE(sat)
- for low on-state conduction losses
鈥?High current handling capability
鈥?MOS Gate turn-on
- drive simplicity
鈥?Fast fall time for switching speeds
up to 20 kHz
Applications
鈥?AC motor speed control
鈥?Uninterruptible power supplies (UPS)
鈥?Welding
Advantages
鈥?High power density
G C
E
C (TAB)
G
E
C (TAB)
TO-263 (IXSA)
TO-220AB (IXSP)
G = Gate
E = Emitter
C = Collector
TAB = Collector
1.3/10 Nm/lb. in
2
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
4.0
7.0
75
200
鹵
100
2.5
V
碌A(chǔ)
碌A(chǔ)
nA
V
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
= 750
碌A(chǔ),
V
CE
= V
GE
V
CE
= V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
鹵
20 V
I
C
= 10A, V
GE
= 15 V
DS99193A(10/04)
漏 2004 IXYS All rights reserved

IXSA10N60B2D1 產(chǎn)品屬性

  • 50

  • 分離式半導(dǎo)體產(chǎn)品

  • IGBT - 單路

  • -

  • PT

  • 600V

  • 2.5V @ 15V，10A

  • 20A

  • 100W

  • 標(biāo)準(zhǔn)型

  • 表面貼裝

  • TO-263-3，D²Pak（2 引線+接片），TO-263AB

  • TO-263

  • 散裝

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