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IXKN75N60C Datasheet

  • IXKN75N60C

  • CoolMOS Power MOSFET

  • 3頁(yè)

  • IXYS   IXYS

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CoolMOS Power MOSFET
IXKN 75N60C
N-Channel Enhancement Mode
Low R
DSon
, High V
DSS
MOSFET
V
DSS
600 V
I
D25
75 A
R
DS(on)
35 m鈩?/div>
鈩?/div>
Preliminary
MOSFET
Symbol
V
DSS
V
GS
I
D25
I
D90
dv/dt
E
AS
E
AR
T
C
= 25擄C
T
C
= 90擄C
V
DS
< V
DSS
; I
F
鈮?/div>
100A;錚礵i
F
/dt錚碘墹 200A/碌s
T
VJ
= 150擄C
I
D
= 10 A; L = 36 mH; T
C
= 25擄C
I
D
= 20 A; L = 5 碌H; T
C
= 25擄C
Conditions
T
VJ
= 25擄C to 150擄C
Maximum Ratings
miniBLOC, SOT-227 B
E72873
S
600
鹵20
75
50
6
1.8
1
V
V
A
A
V/ns
G
S
D
G = Gate
S = Source
D = Drain
J
mJ
Either source terminal at miniBLOC can be used
as main or kelvin source
Symbol
Conditions
Characteristic Values
(T
VJ
= 25擄C, unless otherwise specified)
min.
typ. max.
30
3.5
0.1
35 m鈩?/div>
5.5
V
Features
鈼?/div>
R
DSon
V
GSth
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
F
R
thJC
V
GS
= 10 V; I
D
= I
D90
V
DS
= 20 V; I
D
= 5 mA;
V
DS
= V
DSS
; V
GS
= 0 V; T
VJ
= 25擄C
T
VJ
= 125擄C
V
GS
= 鹵20 V; V
DS
= 0 V
V
GS
= 10 V; V
DS
= 350 V; I
D
= 100 A
0.05 mA
mA
鈼?/div>
miniBLOC package
- Electrically isolated copper base
- Low coupling capacitance to the heatsink for
reduced EMI
- High power dissipation due to AlN
ceramic substrate
- International standard package SOT-227
- Easy screw assembly
fast CoolMOS power MOSFET - 2
nd
generation
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped
inductive switching (UIS)
- Low thermal resistance
due to reduced chip thickness
Enhanced total power density
200 nA
440
112
246
30
95
100
10
0.9
1.1
nC
nC
nC
ns
ns
ns
ns
V
鈼?/div>
V
GS
= 10 V; V
DS
= 380 V;
I
D
= 50 A; R
G
= 1
鈩?/div>
(reverse conduction) I
F
= 37.5 A; V
GS
= 0 V
Applications
鈼?/div>
鈼?/div>
鈼?/div>
0.22 K/W
鈼?/div>
鈼?/div>
Switched mode power supplies (SMPS)
Uninterruptible power supplies (UPS)
Power factor correction (PFC)
Welding
Inductive heating
CoolMOS is a trademark of
Infineon Technologies AG.
IXYS reserves the right to change limits, test conditions and dimensions.
漏 2001 IXYS All rights reserved
1-3
130

IXKN75N60C 產(chǎn)品屬性

  • 10

  • 半導(dǎo)體模塊

  • FET

  • CoolMOS™

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 600V

  • 75A

  • 36 毫歐 @ 50A，10V

  • 3.9V @ 5mA

  • 500nC @ 10V

  • -

  • -

  • 底座安裝

  • SOT-227-4，miniBLOC

  • SOT-227B

  • 管件

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