Advanced Technical Information
CoolMOS Power MOSFET
IXKN 40N60C
N-Channel Enhancement Mode
Low R
DSon
, High V
DSS
MOSFET
V
DSS
600 V
I
D25
40 A
R
DS(on)
70 mW
Symbol
V
DSS
V
GS
I
D25
I
D90
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
V
ISOL
M
d
Conditions
T
J
= 25擄C to 150擄C
Maximum Ratings
600
鹵20
V
V
miniBLOC, SOT-227 B
E72873
S
G
T
C
= 25擄C
T
C
= 90擄C
I
D
= 20 A, L = 5 碌H, T
VJ
= 25擄C, repetitive
I
D
= 10 A, L = 36 mH, T
VJ
= 25擄C, non repetitive
V
DS
攏
V
DSS
, I
S
= 47 A, di
S
/dt = 100 A/碌s, T
J
= T
JM
T
C
= 25擄C
40
27
1
1.8
6
290
-40 ... +150
150
-40 ... +150
A
A
mJ
J
D
S
V/ns
W
擄C
擄C
擄C
V~
G = Gate
S = Source
D = Drain
Either source terminal at miniBLOC can be used
as main or kelvin source
50/60 Hz, RMS I
ISOL
攏
1 mA
Mounting torque
Terminal connetion torque (M4)
2500
Features
q
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
miniBLOC package
- Electrically isolated copper base
- Low coupling capacitance to the heatsink for
reduced EMI
- High power dissipation due to AlN
ceramic substrate
- International standard package SOT-227
- Easy screw assembly
Fast CoolMOS power MOSFET
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped
inductive switching (UIS)
- Low thermal resistance
due to reduced chip thickness
Enhanced total power density
q
MOSFET
Symbol
Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
600
T
J
= 25擄C
T
J
= 125擄C
0.5
50
25
70
3.5
5.5
鹵100
V
q
V
DSS
I
DSS
R
DS(on)
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 1 mA
V
DS
= 0.8
鈥?/div>
V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5
鈥?/div>
I
D25
V
DS
= V
GS
, I
D
= 2.5 mA
V
GS
=
鹵20
V
DC
, V
DS
= 0
碌A(chǔ)
碌A(chǔ)
mW
V
nA
Applications
q
q
q
q
q
Switched mode power supplies (SMPS)
Uninterruptible power supplies (UPS)
Power factor correction (PFC)
Welding
Inductive heating
CoolMOS is a trademark of
Infineon Technologies AG.
IXYS reserves the right to change limits, test conditions and dimensions.
漏 2000 IXYS All rights reserved
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