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IXKC25N80C Datasheet

  • IXKC25N80C

  • TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 25A I(D) |...

  • 2頁(yè)

  • ETC

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ADVANCE TECHNICAL INFORMATION
CoolMOS Power MOSFET
ISOPLUS220
TM
Electrically Isolated Back Surface
N-Channel Enhancement Mode
Low R
DS(on)
, High Voltage MOSFET
IXKC 25N80C
V
DSS
= 800 V
I
D25
= 25 A
鈩?/div>
R
DS(on)
= 150 m鈩?/div>
Symbol
V
DSS
V
GS
I
D25
I
D90
I
D(RMS)
E
AS
E
AR
dv/dt
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
F
C
Weight
Test Conditions
T
J
= 25擄C to 150擄C
Continuous
T
C
= 25擄C; Note 1
T
C
= 90擄C, Note 1
Package lead current limit
I
D
I
D
= 4A, T
C
= 25擄C
= 10A
Maximum Ratings
800
鹵20
25
18
45
670
0.5
6
250
-55 ... +150
150
-55 ... +125
V
V
A
A
A
mJ
mJ
V/ns
W
擄C
擄C
擄C
擄C
V~
ISOPLUS 220
TM
G
D
S
Isolated back surface*
G = Gate,
S = Source
* Patent pending
D = Drain,
V
DS
<
V
DSS
,
I
F
鈮?/div>
17 A,
T
VJ
= 150擄C
d
S
/dt = 100 A/碌s
T
C
= 25擄C
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l
3
RD
generation CoolMOS power MOSFET
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped inductive
switching (UIS)
l
Low thermal resistance due to reduced
chip thickness
l
Low drain to tab capacitance(<30pF)
l
1.6 mm (0.062 in.) from case for 10 s
RMS leads-to-tab, 50/60 Hz, t = 1 minute
Mounting force
300
2500
11 ... 65 / 2.4 ...11 N/lb
3
g
Applications
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
125
280
2
T
J
= 25擄C
T
J
= 125擄C
250
鹵200
150 m鈩?/div>
m鈩?/div>
4
50
V
碌A(chǔ)
碌A(chǔ)
nA
Switched Mode Power Supplies (SMPS)
l
Uninterruptible Power Supplies (UPS)
l
Power Factor Correction (PFC)
l
Welding
l
Inductive Heating
l
R
DS(on)
V
GS(th)
I
DSS
I
GSS
V
GS
= 10 V, I
D
= I
D90
, Note 3
V
GS
= 10 V, I
D
= I
D90
, Note 3 T
J
= 125擄C
V
DS
= V
GS
, I
D
= 2 mA
V
DS
= V
DSS
V
GS
= 0 V
V
GS
=
鹵20
V
DC
, V
DS
= 0
Advantages
l
l
l
Easy assembly: no screws or isolation
foils required
Space savings
High power density
COOLMOS is a trademark of Infineon
Technology.
漏 2001 IXYS All rights reserved
98866 (11/01)

IXKC25N80C 產(chǎn)品屬性

  • 50

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • CoolMOS™

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 800V

  • 25A

  • 150 毫歐 @ 18A，10V

  • 4V @ 2mA

  • 180nC @ 10V

  • 4600pF @ 25V

  • -

  • 通孔

  • ISOPLUS220?

  • ISOPLUS220?

  • 管件

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