-55 ... +150
-55 ... +125
鈮?/div>
17 A,
T
VJ
= 150擄C
d
S
/dt = 100 A/碌s
T
C
= 25擄C
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l
3
RD
generation CoolMOS power MOSFET
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped inductive
switching (UIS)
l
Low thermal resistance due to reduced
chip thickness
l
Low drain to tab capacitance(<30pF)
l
1.6 mm (0.062 in.) from case for 10 s
RMS leads-to-tab, 50/60 Hz, t = 1 minute
Mounting force
300
2500
11 ... 65 / 2.4 ...11 N/lb
2
g
Applications
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
250
550
2
T
J
= 25擄C
T
J
= 125擄C
125
鹵100
290 m鈩?/div>
m鈩?/div>
4
25
V
碌A
碌A
nA
Switched Mode Power Supplies (SMPS)
l
Uninterruptible Power Supplies (UPS)
l
Power Factor Correction (PFC)
l
Welding
l
Inductive Heating
l
R
DS(on)
V
GS(th)
I
DSS
I
GSS
V
GS
= 10 V, I
D
= I
D90
, Note 3
V
GS
= 10 V, I
D
= I
D90
, Note 3 T
J
= 125擄C
V
DS
= V
GS
, I
D
= 1 mA
V
DS
= V
DSS
V
GS
= 0 V
V
GS
=
鹵20
V
DC
, V
DS
= 0
Advantages
l
l
l
Easy assembly: no screws or isolation
foils required
Space savings
High power density
COOLMOS is a trademark of Infineon
Technology.
漏 2001 IXYS All rights reserved
98865 (11/01)
1
2
