Advanced Technical Information
HiPerFAST
TM
IGBT
IXGN 200N60B
V
CES
I
C25
V
CE(sat)
= 600 V
= 200 A
= 2.1 V
E
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
V
ISOL
M
d
Weight
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GE
= 1 MW
Continuous
Transient
T
C
= 25擄C
T
C
= 90擄C
T
C
= 25擄C, 1 ms
V
GE
= 15 V, T
VJ
= 125擄C, R
G
= 2.4
W
Clamped inductive load, L = 30
mH
T
C
= 25擄C
Maximum Ratings
600
600
鹵20
鹵30
200
120
400
I
CM
= 200
@ 0.8 V
CES
600
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
W
擄C
擄C
擄C
V~
V~
SOT-227B, miniBLOC
E
聛
G
E
聛
C
G = Gate, C = Collector, E = Emitter
聛
either emitter terminal can be used as
Main or Kelvin Emitter
50/60 Hz
I
ISOL
攏
1 mA
t = 1 min
t=1s
2500
3000
Mounting torque
Terminal connection torque (M4)
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
Features
鈥?International standard package
miniBLOC
鈥?Aluminium nitride isolation
- high power dissipation
鈥?Isolation voltage 3000 V~
鈥?Very high current, fast switching IGBT
鈥?Low V
CE(sat)
- for minimum on-state conduction
losses
鈥?MOS Gate turn-on
- drive simplicity
鈥?Low collector-to-case capacitance
(< 50 pF)
鈥?Low package inductance (< 5 nH)
- easy to drive and to protect
Applications
鈥?AC motor speed control
鈥?DC servo and robot drives
鈥?DC choppers
鈥?Uninterruptible power supplies (UPS)
鈥?Switch-mode and resonant-mode
power supplies
Advantages
鈥?Easy to mount with 2 screws
鈥?Space savings
鈥?High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
600
2.5
T
J
= 25擄C
T
J
= 125擄C
5.5
200
2
鹵400
2.1
V
V
mA
mA
nA
V
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 1 mA , V
GE
= 0 V
= 1 mA, V
CE
= V
GE
V
CE
= V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
鹵20
V
I
C
= I
C90
, V
GE
= 15 V
IXYS reserves the right to change limits, test conditions, and dimensions.
98606 (5/99)
漏 2000 IXYS All rights reserved
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