HiPerFAST
TM
IGBT with Diode
IXGK 50N60BD1
IXGX 50N60BD1
V
CES
I
C25
V
CE(sat)
t
fi
= 600 V
=
75 A
= 2.3 V
=
85 ns
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
M
d
Weight
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GE
= 1 MW
Continuous
Transient
T
C
= 25擄C
T
C
= 90擄C
T
C
= 25擄C, 1 ms
V
GE
= 15 V, T
VJ
= 125擄C, R
G
= 10
W
Clamped inductive load, L = 30
mH
T
C
= 25擄C
Maximum Ratings
600
600
鹵20
鹵30
75
50
200
I
CM
= 100
@ 0.8 V
CES
300
-55 ... +150
150
-55 ... +150
W
擄C
擄C
擄C
V
V
V
V
A
A
A
A
TO-264 AA
(IXGK)
(TAB)
G
C
E
PLUS247
(IXGX)
G = Gate
E = Emitter
C = Collector
Tab = Collector
Mounting torque, TO-247 AD
TO-264
TO-268
1.13/10 Nm/lb.in.
10
5
300
g
g
擄C
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Features
鈥?International standard packages
JEDEC TO-268 and PLUS247 (hole-
less TO-247)
鈥?High frequency IGBT and antparallel
FRED in one package
鈥?New generation HDMOS
TM
process
鈥?High current handling capability
鈥?MOS Gate turn-on fordrive simplicity
鈥?Fast Recovery Epitaxial Diode
(FRED) with soft recovery and low I
RM
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
Min. Typ. Max.
500
2.5
T
J
= 25擄C
T
J
= 125擄C
5.5
650
5
鹵100
2.3
V
V
mA
mA
nA
V
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 1 mA, V
GE
= 0 V
= 500
mA,
V
CE
= V
GE
Applications
鈥?AC motor speed control
鈥?DC servo and robot drives
鈥?DC choppers
鈥?Uninterruptible power supplies (UPS)
鈥?Switch-mode and resonant-mode
power supplies
V
CE
= V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
鹵20
V
I
C
= I
C90
, V
GE
= 15 V
Advantages
鈥?Space savings (two devices on one
package
鈥?Easy to mount with 1 screw
IXYS reserves the right to change limits, test conditions, and dimensions.
98516B (7/00)
漏 2000 IXYS All rights reserved
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