HiPerFAST
TM
IGBT with Diode
Combi Pack
V
CES
I
C25
V
CE(sat)
2.3 V
2.5 V
t
fi
100ns
120ns
IXGK 50N50BU1
IXGK 50N60BU1
500 V 75 A
600 V 75 A
Preliminary data
Symbol
Test Conditions
Maximum Ratings
50N50
50N60
500
500
鹵20
鹵30
75
50
200
600
600
鹵20
鹵30
75
50
200
V
V
V
V
A
A
A
A
TO-264 AA
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
M
d
Weight
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GE
= 1 MW
Continuous
Transient
T
C
= 25擄C
T
C
= 90擄C
T
C
= 25擄C, 1 ms
V
GE
= 15 V, T
VJ
= 125擄C, R
G
= 10
W
Clamped inductive load, L = 30
mH
T
C
= 25擄C
G
C
E
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
I
CM
= 100
@ 0.8 V
CES
300
300
Features
W
擄C
擄C
擄C
Nm/lb.in.
g
擄C
q
q
q
-55 ... +150
150
-55 ... +150
Mounting torque (M4)
0.9/6
10
300
q
q
q
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
International standard package
JEDEC TO-264 AA
High frequency IGBT and anti-
parallel FRED in one package
2nd generation HDMOS
TM
process
Low V
CE(sat)
- for minimum on-state conduction
losses
MOS Gate turn-on
- drive simplicity
Fast Recovery Epitaxial Diode (FRED)
- soft recovery with low I
RM
Applications
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
50N50
50N60
T
J
= 25擄C
T
J
= 125擄C
500
600
2.5
V
V
V
mA
mA
nA
V
V
q
q
q
q
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 500
mA,
V
GE
= 0 V
= 500
mA,
V
CE
= V
GE
q
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
5.5
250
15
鹵100
V
CE
= 0.8 鈥?V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
鹵20
V
I
C
= I
C90
, V
GE
= 15 V
Advantages
q
q
50N50BU1
50N60BU1
2.3
2.5
q
q
Space savings (two devices in one
package)
Easy to mount with 1 screw
(isolated mounting screw hole)
Reduces assembly time and cost
High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
97510A(1/98)
漏 2000 IXYS All rights reserved
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