Ultra-Low V
CE(sat)
IGBT
IXGH 60N60
IXGK 60N60
IXGT 60N60
V
CES
= 600 V
I
C25
= 75 A
V
CE(sat)
= 1.7 V
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
M
d
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GE
= 1 MW
Continuous
Transient
T
C
= 25擄C, limited by leads
T
C
= 90擄C
T
C
= 25擄C, 1 ms
V
GE
= 15 V, T
VJ
= 125擄C, R
G
= 10
W
Clamped inductive load, L = 30
mH
T
C
= 25擄C
Maximum Ratings
600
600
鹵20
鹵30
75
60
200
I
CM
= 100
@ 0.8 V
CES
300
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
TO-247 AD (IXGH)
G
C
E
TO-268
(IXGT)
G
E
(TAB)
TO-264 (IXGK)
W
擄C
擄C
擄C
擄C
g
g
g
G = Gate,
E = Emitter,
G
D
S
D (TAB)
Mounting torque (M3)
1.13/10 Nm/lb.in.
300
6
10
4
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Weight
TO-247
TO-264
TO-268
C = Collector,
TAB = Collector
Features
鈥?International standard package
JEDEC TO-247 AD, TO-264, TO-268
鈥?New generation HDMOS
TM
process
鈥?Low V
CE(sat)
for minimum on-state
conduction losses
鈥?High current handling capability
鈥?MOS Gate turn-on drive simplicity
Applications
鈥?AC motor speed control
鈥?DC servo and robot drives
鈥?DC choppers
鈥?Uninterruptible power supplies (UPS)
鈥?Switch-mode and resonant-mode
power supplies
Advantages
鈥?Easy to mount with 1 screw
(isolated mounting screw hole)
鈥?Low losses, high efficiency
鈥?High power density
鈥?High power, surface mount package
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
600
2.5
T
J
= 25擄C
T
J
= 125擄C
5
200
1
鹵100
1.7
V
V
mA
mA
nA
V
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 250
mA,
V
GE
= 0 V
= 250
mA,
V
CE
= V
GE
V
CE
= 0.8 鈥?V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
鹵20
V
I
C
= I
C90
, V
GE
= 15 V
IXYS reserves the right to change limits, test conditions, and dimensions.
92796L (7/00)
漏 2000 IXYS All rights reserved
1-4
1
2
3
4
