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IXGH32N60BU1 Datasheet

  • IXGH32N60BU1

  • HiPerFAST IGBT with Diode

  • 6頁(yè)

  • IXYS   IXYS

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HiPerFAST
TM
IGBT
with Diode
IXGH 32N60BU1
V
CES
I
C25
V
CE(sat)
t
fi
= 600 V
= 60 A
= 2.3 V
= 80 ns
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GE
= 1 M鈩?/div>
Continuous
Transient
T
C
= 25擄C
T
C
= 90擄C
T
C
= 25擄C, 1 ms
V
GE
= 15 V, T
VJ
= 125擄C, R
G
= 33
鈩?/div>
Clamped inductive load, L = 100
碌H
T
C
= 25擄C
Maximum Ratings
600
600
鹵20
鹵30
60
32
120
I
CM
= 64
@ 0.8 V
CES
200
-55 ... +150
150
-55 ... +150
300
1.13/10
6
V
V
V
V
A
A
A
A
W
擄C
擄C
擄C
擄C
Nm/lb.in.
g
TO-247 AD
C (TAB)
G
C
E
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Maximum Lead and Tab temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M
d
Weight
Mounting torque, TO-247 AD
Features
International standard packages
JEDEC TO-247 SMD
High frequency IGBT and antiparallel
FRED in one package
High current handling capability
Newest generation HDMOS
TM
process
MOS Gate turn-on
- drive simplicity
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
Advantages
Space savings (two devices in one
package)
High power density
Very fast switching speeds for high
frequency applications
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
600
2.5
T
J
= 25擄C
T
J
= 125擄C
5.0
500
8
鹵100
2.3
V
V
碌A(chǔ)
mA
nA
V
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 750碌A(chǔ), V
GE
= 0 V
= 250
碌A(chǔ),
V
CE
= V
GE
V
CE
= 0.8 鈥?V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
鹵20
V
I
C
= I
C90
, V
GE
= 15 V
漏 2003 IXYS All rights reserved
DS95567C(02/03)

IXGH32N60BU1 產(chǎn)品屬性

  • 30

  • 分離式半導(dǎo)體產(chǎn)品

  • IGBT - 單路

  • HiPerFAST™

  • -

  • 600V

  • 2.3V @ 15V，32A

  • 60A

  • 200W

  • 標(biāo)準(zhǔn)型

  • 通孔

  • TO-247-3

  • TO-247AD

  • 散裝

  • Q898891

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