HiPerFAST
TM
IGBT
IXGH30N60B
IXGT30N60B
V
CES
I
C25
V
CE(sat)
t
fi
= 600 V
=
60 A
= 1.8 V
= 100 ns
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C110
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GE
= 1 MW
Continuous
Transient
T
C
= 25擄C
T
C
= 110擄C
T
C
= 25擄C, 1 ms
V
GE
= 15 V, T
VJ
= 125擄C, R
G
= 33
W
Clamped inductive load, L = 100
mH
T
C
= 25擄C
Maximum Ratings
600
600
鹵20
鹵30
60
30
120
I
CM
= 60
@ 0.8 V
CES
200
-55 ... +150
150
-55 ... +150
300
V
V
V
V
A
A
A
A
W
擄C
擄C
擄C
擄C
TO-247 AD
(IXGH)
G
C (TAB)
C
E
TO-268 (D3)
(IXGT)
G
E
(TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M
d
Weight
Mounting torque (M3)
1.13/10 Nm/lb.in.
6
g
Features
鈥?International standard packages
JEDEC TO-268 surface
mountable and JEDEC TO-247 AD
鈥?High current handling capability
鈥?Latest generation HDMOS
TM
process
鈥?MOS Gate turn-on
- drive simplicity
Applications
鈥?AC motor speed control
鈥?DC servo and robot drives
鈥?DC choppers
鈥?Uninterruptible power supplies (UPS)
鈥?Switched-mode and resonant-mode
power supplies
Advantages
鈥?Space savings (two devices in one
package)
鈥?High power density
鈥?Suitable for surface mounting
鈥?Switching speed for high frequency
applications
鈥?Easy to mount with 1 screw,TO-247
(isolated mounting screw hole)
97516D (7/00)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
600
0.072
2.5
-0.286
200
1
鹵100
T
J
= 150擄C
1.8
2.0
5
V
%/K
V
%/K
mA
mA
nA
V
V
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
V
CE(sat)
I
C
= 250
mA,
V
GE
= 0 V
BV
CES
temperature coefficient
I
C
= 250
mA,
V
CE
= V
GE
V
GE(th)
temperature coefficient
V
CE
= 0.8 鈥?V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
鹵20
V
I
C
I
C
= I
C110
, V
GE
= 15 V
= I
C110
, V
GE
= 15 V
T
J
= 25擄C
T
J
= 150擄C
IXYS reserves the right to change limits, test conditions, and dimensions.
漏 2000 IXYS All rights reserved
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