音影先锋亚洲天堂网|电影世界尽头的爱完整版播放|国产 熟女 91|高清无码免费观看欧美日韩|韩国一区二区三区黄色录像|美女亚洲加勒比在线|亚洲综合网 开心五月|7x成人在线入口|成人网站免费日韩毛片区|国产黄片?一级?二级?三级

IXGH30N60BU1 Datasheet

  • IXGH30N60BU1

  • HiPerFAST IGBT with Diode

  • 142.76KB

  • 5頁

  • IXYS   IXYS

掃碼查看芯片數(shù)據(jù)手冊

上傳產(chǎn)品規(guī)格書

PDF預(yù)覽

HiPerFAST
TM
IGBT
with Diode
Combi Pack
IXGH 30N60BU1
IXGT 30N60BU1
V
CES
I
C25
V
CE(sat)
t
fi
TO-268
(IXGT)
= 600 V
=
60 A
= 1.8 V
= 100 ns
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C110
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GE
= 1 M鈩?/div>
Continuous
Transient
T
C
= 25擄C
T
C
= 110擄C
T
C
= 25擄C, 1 ms
V
GE
= 15 V, T
VJ
= 125擄C, R
G
= 33
鈩?/div>
Clamped inductive load, L = 100
碌H
T
C
= 25擄C
Maximum Ratings
600
600
鹵20
鹵30
60
30
120
I
CM
= 60
@ 0.8 V
CES
200
-55 ... +150
150
-55 ... +150
300
1.13/10
TO-268
TO-247 AD
4
6
V
V
V
V
A
A
A
A
G = Gate,
E = Emitter,
G
E
C (TAB)
TO-247 AD
C (TAB)
G
C
E
C = Collector,
TAB = Collector
W
擄C
擄C
擄C
擄C
Nm/lb.in.
g
g
Features
聼
International standard packages
JEDEC TO-247 SMD surface
mountable and JEDEC TO-247 AD
聼
High frequency IGBT and antiparallel
FRED in one package
聼
High current handling capability
聼
Newest generation HDMOS
TM
process
聼
MOS Gate turn-on
- drive simplicity
Applications
聼
AC motor speed control
聼
DC servo and robot drives
聼
DC choppers
聼
Uninterruptible power supplies (UPS)
聼
Switched-mode and resonant-mode
power supplies
Advantages
聼
Space savings (two devices in one
package)
聼
High power density
聼
Optimized
V
CE(sat)
and switching
speeds for medium frequency
applications
97501E (02/02)
Maximum Lead and Tab temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M
d
Weight
Mounting torque, TO-247 AD
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
600
0.072
2.5
-0.286
500
3
鹵100
T
J
= 150擄C
1.8
2.0
5.5
V
%/K
V
%/K
碌A(chǔ)
mA
nA
V
V
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
V
CE(sat)
I
C
= 750碌A(chǔ), V
GE
= 0 V
BV
CES
temperature coefficient
I
C
= 250
碌A(chǔ),
V
CE
= V
GE
V
GE(th)
temperature coefficient
V
CE
= 0.8 鈥?V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
鹵20
V
I
C
I
C
= I
C110
, V
GE
= 15 V
= I
C110
, V
GE
= 15 V
T
J
= 25擄C
T
J
= 150擄C
漏 2002 IXYS All rights reserved

IXGH30N60BU1 產(chǎn)品屬性

  • 30

  • 分離式半導(dǎo)體產(chǎn)品

  • IGBT - 單路

  • HiPerFAST™

  • -

  • 600V

  • 1.8V @ 15V，30A

  • 60A

  • 200W

  • 標(biāo)準(zhǔn)型

  • 通孔

  • TO-247-3

  • TO-247AD

  • 管件

IXGH30N60BU1相關(guān)型號PDF文件下載

掃碼下載APP，
一鍵連接廣大的電子世界。

在線人工客服

買家服務(wù)：
賣家服務(wù)：
技術(shù)客服：

0571-85317607

網(wǎng)站技術(shù)支持

13606545031

客服在線時間周一至周五
9:00-17:30

關(guān)注官方微信號，
第一時間獲取資訊。

建議反饋

聯(lián)系人：

聯(lián)系方式：

按住滑塊，拖拽到最右邊
>>
感謝您向阿庫提出的寶貴意見，您的參與是維庫提升服務(wù)的動力！意見一經(jīng)采納，將有感恩紅包奉上哦！