Low V
CE(sat)
IGBT
High Speed IGBT
V
CES
I
C25
V
CE(sat)
IXGH 12N100
IXGH 12N100A
1000 V 24 A 3.5 V
1000 V 24 A 4.0 V
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
M
d
Weight
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GE
= 1 MW
Continuous
Transient
T
C
= 25擄C
T
C
= 90擄C
T
C
= 25擄C, 1 ms
V
GE
= 15 V, T
VJ
= 125擄C, R
G
= 150
W
Clamped inductive load, L = 300
mH
T
C
= 25擄C
Maximum Ratings
1000
1000
鹵20
鹵30
24
12
48
I
CM
= 24
@ 0.8 V
CES
100
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
W
擄C
擄C
擄C
Nm/lb.in.
g
擄C
TO-247AD
G
C (TAB)
C
E
C
= Collector
TAB = Collector
G = Gate
E = Emitter
Mounting torque (M3)
1.13/10
6
300
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
Min. Typ. Max.
1000
0.072
2.5
-0.192
250
1
鹵100
12N100
12N100A
3.5
4.0
5.5
V
%/K
V
%/K
mA
mA
nA
V
V
BV
CES
I
C
= 3 mA, V
GE
= 0 V
Features
鈥?/div>
International standard package
JEDEC TO-247 AD
鈥?/div>
2nd generation HDMOS
TM
process
鈥?/div>
Low V
CE(sat)
- for low on-state conduction losses
鈥?/div>
High current handling capability
鈥?/div>
MOS Gate turn-on
- drive simplicity
鈥?/div>
Voltage rating guaranteed at high
temperature (125擄C)
Applications
鈥?/div>
AC motor speed control
鈥?/div>
DC servo and robot drives
鈥?/div>
DC choppers
鈥?/div>
Uninterruptible power supplies (UPS)
鈥?/div>
Switch-mode and resonant-mode
power supplies
Advantages
鈥?/div>
Easy to mount with 1 screw
(isolated mounting screw hole)
鈥?/div>
High power density
BV
CES
temperature coefficient
V
GE(th)
I
C
= 500
mA,
V
GE
= V
GE
V
GE(th)
temperature coefficient
I
CES
I
GES
V
CE(sat)
V
CE
= 0.8 V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
鹵20
V
I
C
= I
C90
, V
GE
= 15 V
T
J
= 25擄C
T
J
= 125擄C
IXYS reserves the right to change limits, test conditions, and dimensions.
95590B(7/00)
漏 2000 IXYS All rights reserved
1-2
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