鈥?/div>
holeless TO-264 package
High frequency IGBT and antparallel
FRED in one package
New generation HDMOS
TM
process
MOS Gate turn-on fordrive simplicity
Fast Recovery Epitaxial Diode (FRED)
with soft recovery and low I
RM
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Applications
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C unless otherwise specified)
Min. Typ. Max.
600
2.5
T
J
= 125擄C
5.5
650
5
鹵100
2.3
V
V
碌A(chǔ)
mA
nA
V
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 1 mA, V
GE
= 0 V
= 500
碌A(chǔ),
V
CE
= V
GE
鈥?/div>
AC motor speed control
鈥?/div>
DC servo and robot drives
鈥?/div>
DC choppers
鈥?/div>
Uninterruptible power supplies (UPS)
鈥?/div>
Switch-mode and resonant-mode
power supplies
Advantages
V
CE
= V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
鹵20
V
I
C
= I
C90
, V
GE
= 15 V
Note1
鈥?/div>
Space savings (two devices on one
鈥?/div>
package
Easy spring or clip mounting
漏 2001 IXYS All rights reserved
98850 (8/01)
IXGB75N60BD1 產(chǎn)品屬性
25
分離式半導體產(chǎn)品
IGBT - 單路
HiPerFAST™
-
600V
2.3V @ 15V，75A
120A
360W
標準型
通孔
TO-264-3，TO-264AA
PLUS264?
管件
IXGB75N60BD1相關(guān)型號PDF文件下載
-
型號
版本
描述
廠商
下載
-
英文版
TRANSISTOR | IGBT | N-CHAN | DUAL | 600V V(BR)CES | 16A I(C)...
ETC
-
英文版
TRANSISTOR | IGBT | N-CHAN | DUAL | 600V V(BR)CES | 16A I(C)...
ETC
-
英文版
TRANSISTOR | IGBT | N-CHAN | DUAL | 600V V(BR)CES | 25A I(C)...
ETC
-
英文版
HiPerFAST IGBT with Diode
-
英文版
HiPerFAST IGBT with Diode
IXYS [IXYS...
1
2
