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IXGA12N60C Datasheet

  • IXGA12N60C

  • HiPerFAST IGBT

  • 4頁

  • IXYS   IXYS

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HiPerFAST
TM
IGBT
IXGA 12N60C V
CES
= 600 V
IXGP 12N60C I
C25
= 24 A
V
CE(sat)
= 2.7 V
t
fi(typ)
= 55 ns
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
M
d
Weight
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GE
= 1 M鈩?/div>
Continuous
Transient
T
C
= 25擄C
T
C
= 90擄C
T
C
= 25擄C, 1 ms
V
GE
= 15 V, T
VJ
= 125擄C, R
G
= 33
鈩?/div>
Clamped inductive load, L = 300
碌H
T
C
= 25擄C
Maximum Ratings
600
600
鹵20
鹵30
24
12
48
I
CM
= 24
@ 0.8 V
CES
100
-55 ... +150
150
-55 ... +150
W
擄C
擄C
擄C
V
V
V
V
A
A
A
A
TO-263 AA (IXGA)
G
E
鈫?/div>
C (tab)
TO-220 AB
(IXGP)
G
C
E
G = Gate
E = Emitter
C
= Collector
TAB = Collector
Mounting torque with screw M3
Mounting torque with screw M3.5
0.45/4 Nm/lb.in.
0.55/5 Nm/lb.in.
4
300
g
擄C
Features
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
鈥?/div>
Very high freqency IGBT
鈥?/div>
New generation HDMOS process
鈥?/div>
International standard package
TM
鈥?/div>
High peak current handling capability
Symbol
Test Conditions
(T
J
= 25擄C, unless otherwise specified)
BV
CES
V
GE(th)
I
CES
I
C
= 250
碌A(chǔ),
V
GE
= 0 V
I
C
= 250
碌A(chǔ),
V
GE
= V
GE
V
CE
= 0.8, V
CES
V
GE
= 0 V
I
GES
V
CE(sat)
V
CE
= 0 V, V
GE
=
鹵20
V
I
C
= I
CE90
, V
GE
= 15
2.1
T
J
= 25擄C
T
J
= 125擄C
Characteristic Values
Min.
Typ.
Max.
600
2.5
5.0
200
1
鹵100
2.7
V
V
碌A(chǔ)
mA
nA
V
Advantages
Applications
JEDEC TO-220AB and TO-263AA
鈥?/div>
PFC circuits
鈥?/div>
AC motor speed control
鈥?/div>
DC servo & robot drives
鈥?/div>
Switch-mode and resonant-mode
power supplies
鈥?/div>
High power audio amplifiers
鈥?/div>
Fast switching speed
鈥?/div>
High power density
97534B (2/02)
漏 2002 IXYS All rights reserved

IXGA12N60C 產(chǎn)品屬性

  • 50

  • 分離式半導(dǎo)體產(chǎn)品

  • IGBT - 單路

  • HiPerFAST™

  • -

  • 600V

  • 2.7V @ 15V，12A

  • 24A

  • 100W

  • 標(biāo)準(zhǔn)型

  • 表面貼裝

  • TO-263-3，D²Pak（2 引線+接片），TO-263AB

  • TO-263AA

  • 管件

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