鈮?/div>
250 ns
Maximum Ratings
500
500
鹵20
鹵30
50
55
200
220
50
55
60
3
5
520
-55 ... +150
150
-55 ... +150
300
1.13/10
6
V
V
V
V
PLUS 247
TM
(IXFX)
D (TAB)
A
A
A
A
A
A
mJ
J
V/ns
l
G
D
Features
International standard package
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic rectifier
W
擄
C
擄C
擄
C
擄C
Nm/lb.in.
g
l
l
l
l
l
Applications
l
l
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
500
2.5
4.5
鹵200
T
J
= 25擄C
T
J
= 125擄C
50N50
55N50
25
2
100
80
V
V
nA
碌A(chǔ)
mA
m
鈩?/div>
m
鈩?/div>
l
l
l
l
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 1mA
V
DS
= V
GS
, I
D
= 8mA
V
GS
=
鹵20
V, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 I
D25
Note 1
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Advantages
l
l
l
PLUS 247
TM
package for clip or spring
mounting
Space savings
High power density
漏 2002 IXYS All rights reserved
98507D (04/02)
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