HiPerFET
TM
Power MOSFETs
Single MOSFET Die
Avalanche Rated
Preliminary data sheet
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
1.6 mm (0.063 in.) from case for 10 s
Mounting torque
TO-264
PLUS 247
TO-264
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1 MW
Continuous
Transient
T
C
= 25擄C
T
C
= 25擄C, pulse width limited by T
JM
T
C
= 25擄C
T
C
= 25擄C
T
C
= 25擄C
I
S
攏
I
DM
, di/dt
攏
100 A/ms, V
DD
攏
V
DSS
T
J
攏
150擄C, R
G
= 2
W
T
C
= 25擄C
IXFK 34N80
IXFX 34N80
V
DSS
I
D25
R
DS(on)
= 800 V
=
34 A
= 0.24
W
t
rr
攏
250 ns
Maximum Ratings
800
800
鹵20
鹵30
34
136
36
64
3
5
560
-55 ... +150
150
-55 ... +150
300
V
V
V
V
A
A
A
mJ
J
V/ns
W
擄C
擄C
擄C
擄C
PLUS 247
TM
(IXFX)
G
(TAB)
D
TO-264 AA (IXFK)
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
0.9/6 Nm/lb.in.
6
10
g
g
Features
鈥?International standard packages
鈥?Low R
DS (on)
HDMOS
TM
process
鈥?Rugged polysilicon gate cell structure
鈥?Unclamped Inductive Switching (UIS)
rated
鈥?Low package inductance
- easy to drive and to protect
鈥?Fast intrinsic rectifier
Applications
鈥?DC-DC converters
鈥?Battery chargers
鈥?Switched-mode and resonant-mode
power supplies
鈥?DC choppers
鈥?AC motor control
鈥?Temperature and lighting controls
Advantages
鈥?PLUS 247
TM
package for clip or spring
mounting
鈥?Space savings
鈥?High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
800
3.0
V
5.0 V
鹵200
nA
T
J
= 25擄C
T
J
= 125擄C
100
mA
2 mA
0.24
W
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 3mA
V
DS
= V
GS
, I
D
= 8mA
V
GS
=
鹵20
V, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 鈥?I
D25
Note 1
IXYS reserves the right to change limits, test conditions, and dimensions.
98560B (6/99)
漏 2000 IXYS All rights reserved
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