HiPerFET
TM
Power MOSFETs
Single MOSFET Die
IXFK/IXFX 26N90
IXFK/IXFX 25N90
V
DSS
I
DSS
R
DS(on)
t
rr
900 V 26 A 0.30
W
250 ns
900 V 25 A 0.33
W
250 ns
Preliminary data sheet
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1 MW
Continuous
Transient
T
C
= 25擄C
T
C
= 25擄C, pulse width limited by T
JM
T
C
= 25擄C
T
C
= 25擄C
T
C
= 25擄C
I
S
攏
I
DM
, di/dt
攏
100 A/ms, V
DD
攏
V
DSS
T
J
攏
150擄C, R
G
= 2
W
T
C
= 25擄C
26N90
25N90
26N90
25N90
26N90
25N90
Maximum Ratings
900
900
鹵20
鹵30
26
25
104
100
26
25
64
3
5
560
-55 ... +150
150
-55 ... +150
V
V
V
V
A
PLUS 247
TM
(IXFX)
G
D
S
(TAB)
TO-264 AA (IXFK)
A
A
G
D
(TAB)
S
mJ
J
V/ns
W
擄C
擄C
擄C
擄C
Nm/lb.in.
6
10
g
g
G = Gate
S = Source
D = Drain
TAB = Drain
1.6 mm (0.063 in.) from case for 10 s
Mounting torque
TO-264
PLUS 247
TO-264
Test Conditions
0.4/6
300
Features
鈥?International standard packages
鈥?Low R
DS (on)
HDMOS
TM
process
鈥?Rugged polysilicon gate cell structure
鈥?Unclamped Inductive Switching (UIS)
rated
鈥?Low package inductance
- easy to drive and to protect
鈥?Fast intrinsic rectifier
Applications
鈥?DC-DC converters
鈥?Battery chargers
鈥?Switched-mode and resonant-mode
power supplies
鈥?DC choppers
鈥?AC motor control
鈥?Temperature and lighting controls
Advantages
鈥?PLUS 247
TM
package for clip or spring
mounting
鈥?Space savings
鈥?High power density
Symbol
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
900
3.0
T
J
= 25擄C
T
J
= 125擄C
26N90
25N90
5.0
鹵200
100
2
0.3
0.33
V
V
nA
mA
mA
W
W
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 3mA
V
DS
= V
GS
, I
D
= 8mA
V
GS
=
鹵20
V, V
DS
= 0
V
DS
= 0.8 鈥
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 鈥?I
D25
Note 1
IXYS reserves the right to change limits, test conditions, and dimensions.
98553D (9/99)
漏 2000 IXYS All rights reserved
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