鈩?/div>
T
C
= 25擄C
Maximum Ratings
600
600
鹵20
鹵30
26
104
26
45
1.5
5
360
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
J
V/ns
W
擄C
擄C
擄C
擄C
PLUS 247
TM
(IXFX)
D (TAB)
G
D
TO-264 AA (IXFK)
G
D
S
1.6 mm (0.063 in) from case for 10 s
Mounting torque
TO-264
PLUS-247
TO-264
300
D (TAB)
D = Drain
TAB = Drain
0.9/6 Nm/lb.in.
6
10
g
g
G = Gate
S = Source
Features
l
l
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
600
2.5
4.5
鹵200
T
J
= 25擄C
T
J
= 125擄C
25
1
0.25
V
V
nA
碌A(chǔ)
mA
鈩?/div>
l
l
l
l
l
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250碌A(chǔ)
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
鹵20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
Low gate charge
International standard packages
Epoxy meet UL 94 V-0, flammability
classification
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Avalanche energy and current rated
Fast intrinsic Rectifier
Advantages
l
l
l
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
鈮?/div>
300
碌s,
duty cycle d
鈮?/div>
2 %
Easy to mount
Space savings
High power density
漏 2002 IXYS All rights reserved
98919 (05/02)
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