鈩?/div>
T
C
= 25擄C
Maximum Ratings
1000
1000
鹵20
鹵30
24
96
24
60
3.0
10
560
-55 ... +150
150
-55 ... +150
300
V
V
V
V
A
A
A
mJ
J
V/ns
W
擄C
擄C
擄C
擄C
l
G
(TAB)
D
TO-264 AA (IXFK)
G
D
S
(TAB)
G = Gate
S = Source
Features
l
l
D = Drain
TAB = Drain
l
0.4/6 Nm/lb.in.
6
10
g
g
l
RF capable MOSFETs
Double metal process for low gate
resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic rectifier
Applications
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
1000
3.0
V
5.5 V
鹵200
nA
T
J
= 25擄C
T
J
= 125擄C
100
碌A
3 mA
0.39
鈩?/div>
l
l
l
l
l
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 1mA
V
DS
= V
GS
, I
D
= 8mA
V
GS
=
鹵20
V, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 I
D25
Note 1
DC-DC converters
Switched-mode and resonant-mode
power supplies, >500kHz switching
DC choppers
Pulse generation
Laser drivers
Advantages
l
l
l
PLUS 247
TM
package for clip or spring
mounting
Space savings
High power density
漏 2002 IXYS All rights reserved
98874 (1/02)
1
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