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IXFX21N100F Datasheet

  • IXFX21N100F

  • HiPerRF Power MOSFETs F-Class: MegaHertz Switching

  • 100.98KB

  • 2頁

  • IXYS   IXYS

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HiPerRF
TM
Power MOSFETs
F-Class: MegaHertz Switching
Single MOSFET Die
N-Channel Enhancement Mode
Avalanche Rated,
Low Q
g
, Low Intrinsic R
g
High dV/dt,
Low t
rr
IXFX 21N100F
IXFK 21N100F
V
DSS
= 1000 V
I
D25
= 21 A
R
DS(on)
= 0.50
鈩?/div>
t
rr
鈮?/div>
250 ns
PLUS 247
TM
(IXFX)
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
1.6 mm (0.063 in.) from case for 10 s
Mounting torque
TO-264
PLUS 247
TO-264
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1 M鈩?/div>
Continuous
Transient
T
C
= 25擄C
T
C
= 25擄C, pulse width limited by T
JM
T
C
= 25擄C
T
C
= 25擄C
T
C
= 25擄C
I
S
鈮?/div>
I
DM
, di/dt
鈮?/div>
100 A/碌s, V
DD
鈮?/div>
V
DSS
T
J
鈮?/div>
150擄C, R
G
= 2
鈩?/div>
T
C
= 25擄C
Maximum Ratings
1000
1000
鹵20
鹵30
21
84
21
60
2.5
10
500
-55 ... +150
150
-55 ... +150
300
V
V
V
V
A
A
A
mJ
J
V/ns
W
擄C
擄C
擄C
擄C
G = Gate
S = Source
(TAB)
D
G
TO-264 AA (IXFK)
G
D
S
(TAB)
D = Drain
TAB = Drain
0.4/6 Nm/lb.in.
5
10
g
g
Features
l
RF capable MOSFETs
l
Double metal process for low gate
resistance
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
l
Fast intrinsic rectifier
Applications
l
DC-DC converters
l
Switched-mode and resonant-mode
power supplies, >500kHz switching
l
DC choppers
l
13.5 MHz industrial applications
l
Pulse generation
l
Laser drivers
l
RF amplifiers
Advantages
l
PLUS 247
TM
package for clip or spring
mounting
l
Space savings
l
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
1000
3.0
V
5.0 V
鹵100
nA
T
J
= 25擄C
T
J
= 125擄C
100
碌A(chǔ)
2 mA
0.50
鈩?/div>
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 1mA
V
DS
= V
GS
, I
D
= 4mA
V
GS
=
鹵20
V, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 I
D25
Note 1
漏 2002 IXYS All rights reserved
98880 (01/02)

IXFX21N100F 產(chǎn)品屬性

  • IXYS

  • N-Channel

  • 1000 V

  • +/- 20 V

  • 21 A

  • 0.5 Ohms

  • Single

  • + 150 C

  • Through Hole

  • PLUS 247

  • Tube

  • 15 ns

  • - 55 C

  • 500 W

  • 16 ns

  • 30

  • 55 ns

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