鈩?/div>
T
C
= 25擄C
IXFH16N90
IXFX16N90
V
DSS
= 900 V
I
D25
= 16 A
R
DS(
on
)
= 0.65
W
t
rr
攏
200 ns
Maximum Ratings
900
900
鹵20
鹵30
16
64
16
45
5
360
-55 ... +150
150
-55 ... +150
300
1.13/10
6
V
V
V
V
A
A
A
mJ
V/ns
W
擄C
擄C
擄C
擄C
Nm/lb.in.
g
TO-247 AD
(IXFH)
(TAB)
PLUS 247
TM
(IXFX)
G
C (TAB)
D
Features
l
l
l
l
l
l
International standard packages
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Rectifier
Applications
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
900
2.0
4.5
鹵100
T
J
= 25擄C
T
J
= 125擄C
25
250
0.65
V
V
nA
碌A(chǔ)
碌A(chǔ)
鈩?/div>
l
l
l
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250碌A(chǔ)
V
DS
= V
GS
, I
D
= 5 mA
V
GS
=
鹵20
V
DC
, V
DS
= 0
V
DS
= 0.8 聲 V
DSS
V
GS
= 0 V
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DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Advantages
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V
GS
= 10 V, I
D
= 0.5 聲 I
D25
Pulse test, t
鈮?/div>
300
碌s,
duty cycle d
鈮?/div>
2 %
l
l
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole) or
mounting clip or spring (PLUS 247
TM
)
Space savings
High power density
漏 1998 IXYS All rights reserved
97547(2/98)
1
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