HiPerFET
TM
Power MOSFETs
IXFR 80N20Q
TM
ISOPLUS247 , Q-Class
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
Low Q
g
, High dv/dt
Preliminary data
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
1.6 mm (0.063 in) from case for 10 s
Mounting torque
I
S
攏
I
DM
, di/dt
攏
100 A/ms, V
DD
攏
V
DSS
,
T
J
攏
150擄C, R
G
= 2
W
T
C
= 25擄C
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1 MW
Continuous
Transient
T
C
= 25擄C
T
C
= 25擄C, pulse width limited by T
JM
T
C
= 25擄C
T
C
= 25擄C
Maximum Ratings
200
200
鹵20
鹵30
71
320
80
45
1.5
5
310
-55 ... +150
150
-55 ... +150
300
1.13/10
V
V
V
V
A
A
A
mJ
J
V/ns
W
擄C
擄C
擄C
擄C
Nm/lb.in.
5
g
V
DSS
I
D25
R
DS(on)
= 200 V
= 71 A
= 28mW
t
rr
攏
200 ns
ISOPLUS 247
TM
E153432
G
D
G = Gate
S = Source
D = Drain
TAB = Drain
Features
鈥?Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
鈥?Low drain to tab capacitance(<30pF)
鈥?Low R
DS (on)
HDMOS
TM
process
鈥?Rugged polysilicon gate cell structure
鈥?Unclamped Inductive Switching (UIS)
rated
鈥?Fast intrinsic Rectifier
Applications
鈥?DC-DC converters
鈥?Battery chargers
鈥?Switched-mode and resonant-mode
power supplies
鈥?DC choppers
鈥?AC motor control
Advantages
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min.
typ.
max.
200
2.0
4.0
鹵100
T
J
= 25擄C
T
J
= 125擄C
25
1
28
V
V
nA
mA
mA
mW
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250 uA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
鹵20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= I
T
Note 1
鈥?Easy assembly
鈥?Space savings
鈥?High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
98617A (7/00)
漏 2000 IXYS All rights reserved
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