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IXFR55N50 Datasheet

  • IXFR55N50

  • TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 48A I(D) |...

  • 79.17KB

  • 2頁

  • ETC

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HiPerFET
TM
Power MOSFETs
ISOPLUS247
TM
(Electrically Isolated Back Surface)
Single Die MOSFET
V
DSS
IXFR 50N50
IXFR 55N50
I
D25
R
DS(on)
100 m鈩?/div>
鈩?/div>
鈩?/div>
90 m鈩?/div>
500 V 43 A
500 V 48 A
t
rr
鈮?/div>
250 ns
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
Weight
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1 M鈩?/div>
Continuous
Transient
T
C
= 25擄C
T
C
= 25擄C, Pulse width limited by T
JM
T
C
= 25擄C
T
C
= 25擄C
T
C
= 25擄C
I
S
鈮?/div>
I
DM
, di/dt
鈮?/div>
100 A/碌s, V
DD
鈮?/div>
V
DSS
T
J
鈮?/div>
150擄C, R
G
= 2
鈩?/div>
T
C
= 25擄C
50N50
55N50
50N50
55N50
50N50
55N50
Maximum Ratings
500
500
鹵20
鹵30
43
48
200
220
50
55
60
3
5
400
-40 ... +150
150
-40 ... +150
V
V
V
V
A
A
A
A
A
A
mJ
J
V/ns
W
擄
C
擄
C
擄
C
擄C
V~
g
ISOPLUS 247
TM
G
D
Isolated back surface*
G = Gate
S = Source
D = Drain
* Patent pending
Features
l
l
l
l
l
1.6 mm (0.063 in.) from case for 10 s
50/60 Hz, RMS
t = 1 min
300
2500
5
l
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<50pF)
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Fast intrinsic Rectifier
Applications
l
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
500
2.5
V
4.5 V
鹵200
nA
T
J
= 25擄C
T
J
= 125擄C
50N50
55N50
25
碌A(chǔ)
2 mA
100 m鈩?/div>
90 m鈩?/div>
l
l
l
l
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 1mA
V
DS
= V
GS
, I
D
= 8mA
V
GS
=
鹵20
V, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= I
T
Note 1
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Advantages
l
l
l
Easy assembly
Space savings
High power density
漏 2002 IXYS All rights reserved
98588B (04/02)

IXFR55N50 產(chǎn)品屬性

  • 30

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • HiPerFET™

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 500V

  • 48A

  • 90 毫歐 @ 27.5A，10V

  • 4.5V @ 8mA

  • 330nC @ 10V

  • 9400pF @ 25V

  • 400W

  • 通孔

  • ISOPLUS247?

  • ISOPLUS247?

  • 管件

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