鈩?/div>
T
C
= 25擄C
Maximum Ratings
500
500
鹵20
鹵30
45
220
55
60
3.0
10
400
-40 ... +150
150
-40 ... +150
V
V
V
V
A
A
A
mJ
J
V/ns
W
擄
C
擄C
擄
C
擄
C
V~
g
ISOPLUS 247
TM
E153432
Isolated backside*
G = Gate
D = Drain
S = Source TAB = Electrically Isolated
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
RF capable Mosfets
Low gate charge and capacitances
- easier to drive
-faster switching
Low drain to tab capacitance(<30pF)
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Rated for Unclamped Inductive Load
Switching (UIS)
Fast intrinsic Rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Advantages
Easy assembly
Space savings
High power density
1.6 mm (0.063 in.) from case for 10 s
50/60 Hz, RMS
t = 1 min
300
2500
5
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
500
3.0
V
5.5 V
鹵200
nA
T
J
= 25擄C
T
J
= 125擄C
100
碌A(chǔ)
3 mA
90 m鈩?/div>
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 1mA
V
DS
= V
GS
, I
D
= 8mA
V
GS
=
鹵20
V, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= I
T
Notes 2, 3
漏 2004 IXYS All rights reserved
DS98814C(06/04)
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