鈮?/div>
200ns
Maximum Ratings
1000
1000
鹵20
鹵30
3.5
16
4
20
700
5
80
-55 ... +150
150
-55 ... +150
300
2500
5
V
V
V
V
A
A
A
mJ
mJ
V/ns
W
擄C
擄C
擄C
擄C
V~
g
ISOPLUS 247
TM
E153432
Isolated backside*
G = Gate
S = Source
D = Drain
* Patent pending
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<30pF)
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Rated for Unclamped Inductive Load
Switching (UIS)
Fast intrinsic Rectifier
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
1000
3.0
V
5.0 V
鹵100
nA
T
J
= 25擄C
T
J
= 125擄C
50
碌A(chǔ)
1 mA
3.0
鈩?/div>
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Advantages
Easy assembly
Space savings
High power density
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 1mA
V
DS
= V
GS
, I
D
= 1.5 mA
V
GS
=
鹵20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= I
T
Notes 2, 3
漏 2002 IXYS All rights reserved
DS98860A(12/02)
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