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IXFR44N50Q Datasheet

  • IXFR44N50Q

  • HiPerFET Power MOSFETs ISOPLUS247 Q-Class

  • 2頁

  • IXYS   IXYS

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HiPerFET
TM
Power MOSFETs
ISOPLUS247
TM
, Q-Class
(Electrically Isolated Backside)
N-Channel Enhancement Mode
Avalanche Rated, Low Q
g
, High dv/dt
V
DSS
IXFR 44N50Q
IXFR 48N50Q
I
D25
R
DS(on)
鈩?/div>
500 V 34 A 120 m鈩?/div>
鈩?/div>
500 V 40 A 110 m鈩?/div>
t
rr
鈮?/div>
250 ns
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
Weight
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1 M鈩?/div>
Continuous
Transient
T
C
= 25擄C
T
C
= 25擄C, Note 1
T
C
= 25擄C
T
C
= 25擄C
T
C
= 25擄C
I
S
鈮?/div>
I
DM
, di/dt
鈮?/div>
100 A/碌s, V
DD
鈮?/div>
V
DSS
T
J
鈮?/div>
150擄C, R
G
= 2
鈩?/div>
T
C
= 25擄C
Maximum Ratings
500
500
鹵20
鹵30
44N50Q
48N50Q
44N50Q
48N50Q
44N50Q
48N50Q
34
40
176
192
44
48
60
2.5
5
310
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
A
A
mJ
J
V/ns
W
擄C
擄C
擄C
擄C
V~
g
ISOPLUS 247
TM
E153432
Isolated backside*
G = Gate
S = Source
D = Drain
* Patent pending
Features
l
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l
Low drain to tab capacitance(<30pF)
l
l
l
1.6 mm (0.063 in.) from case for 10 s
50/60 Hz, RMS
t = 1 min
300
2500
5
IXYS advanced low Q
g
process
Rugged polysilicon gate cell structure
Rated for Unclamped Inductive Load
Switching (UIS)
l
Fast intrinsic diode
Applications
l
DC-DC converters
l
l
l
l
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
500
2.0
V
4.0 V
鹵100
nA
T
J
= 125擄C
44N50Q
48N50Q
100
碌A(chǔ)
2 mA
120 m鈩?/div>
110 m鈩?/div>
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250碌A(chǔ)
V
DS
= V
GS
, I
D
= 4mA
V
GS
=
鹵20
V, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= I
T
Notes 2, 3
Advantages
l
Easy assembly
l
l
Space savings
High power density
漏 2002 IXYS All rights reserved
98702B (6/02)

IXFR44N50Q 產(chǎn)品屬性

  • 30

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • HiPerFET™

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 500V

  • 34A

  • 120 毫歐 @ 22A，10V

  • 4V @ 4mA

  • 190nC @ 10V

  • 7000pF @ 25V

  • 310W

  • 通孔

  • ISOPLUS247?

  • ISOPLUS247?

  • 管件

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