鈩?/div>
T
C
= 25擄C
Maximum Ratings
800
800
鹵30
鹵40
28
150
38
75
4.0
20
416
-55 ... +150
150
-55 ... +150
300
2500
3000
V
V
V
V
A
A
A
mJ
J
V/ns
Features
W
擄C
擄C
擄C
擄C
V~
V~
Double metal process for low gate
resistance
Silicon chip on DCB substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Epoxy meet UL 94 V-0, flammability
classification
Avalanche energy and current rated
Fast intrinsic Rectifier
Advantages
Easy assembly
Space savings
High power density
G
D
Isolated Back
Surface
D = Drain
ISOPLUS247 (IXFR)
G = Gate
S = Source
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
800
2.0
4.5
鹵200
T
J
= 25擄C
T
J
= 125擄C
50
2
V
V
nA
碌A(chǔ)
mA
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 3mA
V
DS
= V
GS
, I
D
= 8 mA
V
GS
=
鹵30
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= I
T
Pulse test, t
鈮?/div>
300
碌s,
duty cycle d
鈮?/div>
2 %
240 m鈩?/div>
漏 2004 IXYS All rights reserved
DS99203(09/04)
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