HiPerFET
TM
Power MOSFETs
ISOPLUS247
TM
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
High dV/dt, Low t
rr
, HDMOS
TM
Family
Preliminary data
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AS
E
AR
dv/dt
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
Weight
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS
t = 1 minute leads-to-tab
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1 MW
Continuous
Transient
T
C
= 25擄C
T
C
= 25擄C, Pulse width limited by T
JM
T
C
= 25擄C
T
C
= 25擄C
T
C
= 25擄C
I
S
攏
I
DM
, di/dt
攏
100 A/ms, V
DD
攏
V
DSS
T
J
攏
150擄C, R
G
= 2
W
T
C
= 25擄C
V
DSS
IXFR 30N50Q
IXFR 32N50Q
I
D25
R
DS(on)
0.16
W
0.15
W
500 V
29 A
500 V
30 A
t
rr
攏
250 ns
Maximum Ratings
500
500
鹵20
鹵30
30N50
32N50
30N50
32N50
30N50
32N50
30
120
30
1.5
45
5
310
-55 ... +150
150
-55 ... +150
300
2500
6
V
V
V
V
A
A
A
J
mJ
V/ns
W
擄C
擄C
擄C
擄C
V~
g
ISOPLUS 247
TM
E 153432
G
D
Isolated back surface*
G = Gate
S = Source
* Patent pending
D = Drain
Features
鈥?Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
鈥?Low drain to tab capacitance(<50pF)
鈥?Low R
DS (on)
HDMOS
TM
process
鈥?Rugged polysilicon gate cell structure
鈥?Unclamped Inductive Switching (UIS)
rated
鈥?Fast intrinsic Rectifier
Applications
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
500
2
4
鹵100
T
J
= 25擄C
T
J
= 125擄C
30N50
32N50
100
1
0.16
0.15
V
V
nA
mA
mA
W
W
Advantages
鈥?Easy assembly
鈥?Space savings
鈥?High power density
98608B (7/00)
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 1mA
V
DS
= V
GS
, I
D
= 4mA
V
GS
=
鹵20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= I
T
Notes 1, 2
DC-DC converters
鈥?Battery chargers
鈥?Switched-mode and resonant-mode
power supplies
鈥?DC choppers
鈥?AC motor control
IXYS reserves the right to change limits, test conditions, and dimensions.
漏 2000 IXYS All rights reserved
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