Advanced Technical Information
HiPerFET
TM
Power MOSFETs
IXFR 26N50
ISOPLUS247
TM
IXFR 24N50
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
High dV/dt, Low t
rr
, HDMOS
TM
Family
V
DSS
I
D25
R
DS(on)
0.20
W
0.23
W
500 V
24 A
500 V
22 A
t
rr
攏
250 ns
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
Weight
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1 MW
Continuous
Transient
T
C
= 25擄C
T
C
= 25擄C, Pulse width limited by T
JM
T
C
= 25擄C
T
C
= 25擄C
I
S
攏
I
DM
, di/dt
攏
100 A/ms, V
DD
攏
V
DSS
T
J
攏
150擄C, R
G
= 2
W
T
C
= 25擄C
26N50
24N50
26N50
24N50
26N50
24N50
Maximum Ratings
500
500
鹵20
鹵30
26
24
104
96
26
24
30
5
250
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
A
A
mJ
V/ns
ISOPLUS 247
TM
G
D
Isolated back surface*
G = Gate
S = Source
* Patent pending
D = Drain
Features
W
擄C
擄C
擄C
擄C
V~
g
鈥?Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
鈥?Low drain to tab capacitance(<50pF)
鈥?Low R
DS (on)
HDMOS
TM
process
鈥?Rugged polysilicon gate cell structure
鈥?Unclamped Inductive Switching (UIS)
rated
鈥?Fast intrinsic Rectifier
Applications
鈥?DC-DC converters
鈥?Battery chargers
鈥?Switched-mode and resonant-mode
power supplies
鈥?DC choppers
鈥?AC motor control
Advantages
鈥?Easy assembly
鈥?Space savings
鈥?High power density
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS
t = 1 minute leads-to-tab
300
2500
6
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
500
2
4
鹵100
T
J
= 25擄C
T
J
= 125擄C
26N50
24N50
200
1
0.20
0.23
V
V
nA
mA
mA
W
W
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250uA
V
DS
= V
GS
, I
D
= 4mA
V
GS
=
鹵20
V
DC
, V
DS
= 0
V
DS
= 0.8 鈥?V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= I
T
Notes 1 & 2
IXYS reserves the right to change limits, test conditions, and dimensions.
98526A (2/99)
漏 2000 IXYS All rights reserved
1-2
IXYS
1
2
