HiPerFET
TM
Power MOSFETs IXFR 180N10
V
DSS
= 100
ISOPLUS247
TM
I
D25
= 165
(Electrically Isolated Back Surface)
Single MOSFET Die
Preliminary data
R
DS(on)
=
V
A
8 mW
t
rr
攏
250 ns
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
D(RMS)
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
Weight
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1 MW
Continuous
Transient
T
C
= 25擄C (MOSFET chip capability)
External lead (current limit)
T
C
= 25擄C, Note 1
T
C
= 25擄C
T
C
= 25擄C
T
C
= 25擄C
I
S
攏
I
DM
, di/dt
攏
100 A/ms, V
DD
攏
V
DSS
T
J
攏
150擄C, R
G
= 2
W
T
C
= 25擄C
Maximum Ratings
100
100
鹵20
鹵30
165
76
720
180
60
3
5
400
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
mJ
J
V/ns
ISOPLUS 247
TM
G
D
Isolated back surface*
G = Gate
S = Source
* Patent pending
D = Drain
Features
W
擄C
擄C
擄C
擄C
V~
g
鈥?Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
鈥?Low drain to tab capacitance(<25pF)
鈥?Low R
DS (on)
HDMOS
TM
process
鈥?Rugged polysilicon gate cell structure
鈥?Unclamped Inductive Switching (UIS)
rated
鈥?Fast intrinsic Rectifier
Applications
鈥?DC-DC converters
鈥?Battery chargers
鈥?Switched-mode and resonant-mode
power supplies
鈥?DC choppers
鈥?AC motor control
Advantages
鈥?Easy assembly
鈥?Space savings
鈥?High power density
1.6 mm (0.063 in.) from case for 10 s
50/60 Hz, RMS
t = 1 min
300
2500
5
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
100
2.0
V
4.0 V
鹵100
nA
T
J
= 25擄C
T
J
= 125擄C
100
mA
2 mA
8 mW
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 3mA
V
DS
= V
GS
, I
D
= 8mA
V
GS
=
鹵20
V, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 90A
Note 1
IXYS reserves the right to change limits, test conditions, and dimensions.
98584A (7/00)
漏 2000 IXYS All rights reserved
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