鈩?/div>
T
C
= 25擄C
12N100
10N100
12N100
10N100
12N100
10N100
Maximum Ratings
1000
1000
鹵20
鹵30
10
9
48
40
12
10
31
1
5
250
-40 ... +150
150
-40 ... +150
300
2500
5
V
V
V
V
A
A
A
A
A
A
mJ
J
V/ns
W
擄C
擄C
擄C
擄C
V~
g
ISOPLUS 247
TM
(IXFR)
G
(TAB)
D
Isolated back surface*
G = Gate
S = Source
D = Drain
TAB = Drain
Features
RF capable MOSFETs
Double metal process for low gate
resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic rectifier
Applications
DC-DC converters
Switched-mode and resonant-mode
power supplies, >500kHz switching
DC choppers
13.5 MHz industrial applications
Pulse generation
Laser drivers
RF amplifiers
Advantages
ISOPLUS 247
TM
package for clip or
spring mounting
Space savings
High power density
98934(7/02)
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
1000
3.0
V
5.5 V
鹵100
nA
T
J
= 25擄C
T
J
= 125擄C
12N100
10N100
50
碌A(chǔ)
1.5 mA
1.05
1.2
鈩?/div>
鈩?/div>
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 1mA
V
DS
= V
GS
, I
D
= 4mA
V
GS
=
鹵20
V, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= I
T
Notes 1 & 2
漏 2002 IXYS All rights reserved
next