音影先锋亚洲天堂网|电影世界尽头的爱完整版播放|国产 熟女 91|高清无码免费观看欧美日韩|韩国一区二区三区黄色录像|美女亚洲加勒比在线|亚洲综合网 开心五月|7x成人在线入口|成人网站免费日韩毛片区|国产黄片?一级?二级?三级

IXFR100N25 Datasheet

  • IXFR100N25

  • HiPerFET Power MOSFETs ISOPLUS247

  • 83.92KB

  • 2頁

  • IXYS   IXYS

掃碼查看芯片數(shù)據(jù)手冊

上傳產(chǎn)品規(guī)格書

PDF預覽

Advance Technical Information
HiPerFET
TM
Power MOSFETs
ISOPLUS247
TM
(Electrically Isolated Backside)
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
IXFR 100N25
V
DSS
I
D25
R
DS(on)
= 250
V
= 87
A
鈩?/div>
= 27 m鈩?/div>
t
rr
鈮?/div>
250 ns
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
L(RMS)
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
Weight
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1 M鈩?/div>
Continuous
Transient
T
C
T
C
T
C
T
C
= 25擄C (MOSFET chip capability)
= External lead current limit
= 25擄C, Note 1
= 25擄C
Maximum Ratings
250
250
鹵20
鹵30
87
75
400
100
64
3
5
400
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
mJ
J
V/ns
W
擄C
擄
C
擄
C
擄C
V~
g
ISOPLUS 247
TM
E153432
Isolated backside*
G = Gate
S = Source
D = Drain
T
C
= 25擄C
T
C
= 25擄C
I
S
鈮?/div>
I
DM
, di/dt
鈮?/div>
100 A/碌s, V
DD
鈮?/div>
V
DSS
T
J
鈮?/div>
150擄C, R
G
= 2
鈩?/div>
T
C
= 25擄C
* Patent pending
1.6 mm (0.063 in.) from case for 10 s
50/60 Hz, RMS
t = 1 min
300
2500
5
Features
l
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l
Low drain to tab capacitance(<30pF)
l
l
l
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Rated for Unclamped Inductive Load
Switching (UIS)
l
Fast intrinsic Rectifier
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
250
2.0
V
4 V
鹵200
nA
T
J
= 25擄C
T
J
= 125擄C
100
碌A(chǔ)
2 mA
27 m鈩?/div>
Applications
l
DC-DC converters
l
l
l
l
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 3mA
V
DS
= V
GS
, I
D
= 8mA
V
GS
=
鹵20
V, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= I
T
Notes 2, 3
Advantages
l
Easy assembly
l
l
Space savings
High power density
漏 2001 IXYS All rights reserved
98840 (5/01)

IXFR100N25 產(chǎn)品屬性

  • 30

  • 分離式半導體產(chǎn)品

  • FET - 單

  • HiPerFET™

  • MOSFET N 通道，金屬氧化物

  • 標準型

  • 250V

  • 87A

  • 27 毫歐 @ 50A，10V

  • 4V @ 8mA

  • 300nC @ 10V

  • 9100pF @ 25V

  • 400W

  • 通孔

  • ISOPLUS247?

  • ISOPLUS247?

  • 管件

IXFR100N25相關(guān)型號PDF文件下載

掃碼下載APP，
一鍵連接廣大的電子世界。

在線人工客服

買家服務：
賣家服務：
技術(shù)客服：

0571-85317607

網(wǎng)站技術(shù)支持

13606545031

客服在線時間周一至周五
9:00-17:30

關(guān)注官方微信號，
第一時間獲取資訊。

建議反饋

聯(lián)系人：

聯(lián)系方式：

按住滑塊，拖拽到最右邊
>>
感謝您向阿庫提出的寶貴意見，您的參與是維庫提升服務的動力！意見一經(jīng)采納，將有感恩紅包奉上哦！