Advanced Technical Information
HiPerFET
TM
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
J
V
ISOL
M
d
Weight
1.6 mm (0.63 in) from case for 10 s
50/60 Hz, RMS
I
ISOL
攏
1 mA
t = 1 min
t=1s
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1 MW
Continuous
Transient
T
C
= 25擄C
T
C
= 25擄C, pulse width limited by T
JM
T
C
= 25擄C
T
C
= 25擄C
T
C
= 25擄C
I
S
攏
I
DM
, di/dt
攏
100 A/ms, V
DD
攏
V
DSS
,
T
J
攏
150擄C, R
G
= 2
W
T
C
= 25擄C
IXFN90N30
V
DSS
I
D25
R
DS(on)
= 300 V
= 90 A
= 33 mW
D
t
rr
攏
250 ns
G
S
S
Maximum Ratings
300
300
鹵20
鹵30
90
360
90
64
3
5
560
-55 ... +150
150
-55 ... +150
-
2500
3000
V
V
V
V
A
A
A
mJ
J
V/ns
W
擄C
擄C
擄C
擄C
V~
V~
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
鈥?/div>
International standard package
鈥?/div>
miniBLOC, with Aluminium nitride
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
isolation
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
Mounting torque
Terminal connection torque
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
Applications
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
300
2
4
鹵100
T
J
= 25擄C
T
J
= 125擄C
100
2
33
V
V
nA
mA
mA
mW
Advantages
鈥?/div>
DC-DC converters
鈥?/div>
Battery chargers
鈥?/div>
Switched-mode and resonant-mode
power supplies
鈥?/div>
DC choppers
鈥?/div>
Temperature and lighting controls
V
DSS
V
GH(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 3 mA
V
DS
= V
GS
, I
D
= 8 mA
V
GS
=
鹵20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 鈥?I
D25
Pulse test, t
攏
300
ms,
duty cycle d
攏
2 %
鈥?/div>
Easy to mount
鈥?/div>
Space savings
鈥?/div>
High power density
98540 (9/98)
IXYS reserves the right to change limits, test conditions, and dimensions.
漏 2000 IXYS All rights reserved
1-2
IXFN90N30 產(chǎn)品屬性
10
半導(dǎo)體模塊
FET
HiPerFET™
MOSFET N 通道，金屬氧化物
標(biāo)準(zhǔn)型
300V
90A
33 毫歐 @ 45A，10V
4V @ 8mA
360nC @ 10V
10000pF @ 25V
560W
底座安裝
SOT-227-4，miniBLOC
SOT-227B
管件
IXFN90N30相關(guān)型號(hào)PDF文件下載
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