HiPerFET
TM
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
Preliminary data
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
V
ISOL
M
d
Weight
50/60 Hz, RMS
I
ISOL
攏
1 mA
t = 1 min
t=1s
I
S
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1 MW
Continuous
Transient
T
C
= 25擄C, Chip capability
T
C
= 25擄C, pulse width limited by T
JM
T
C
= 25擄C
T
C
= 25擄C
T
C
= 25擄C
攏
I
DM
, di/dt
攏
100 A/ms, V
DD
攏
V
DSS
,
T
J
攏
150擄C, R
G
= 2
W
T
C
= 25擄C
IXFN 60N60 V
DSS
I
D25
R
DS(on)
D
G
S
= 600 V
= 60 A
= 75 mW
S
Maximum Ratings
600
600
鹵20
鹵30
60
240
60
64
4
5
700
-55 ... +150
150
-55 ... +150
2500
3000
V
V
V
V
A
A
A
mJ
J
V/ns
W
擄C
擄C
擄C
V~
V~
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
鈥?/div>
International standard packages
鈥?/div>
miniBLOC, with Aluminium nitride
鈥?/div>
鈥?/div>
Rugged polysilicon gate cell structure
鈥?/div>
Unclamped Inductive Switching (UIS)
鈥?/div>
鈥?/div>
Fast intrinsic Rectifier
Applications
鈥?/div>
DC-DC converters
rated
Low package inductance
isolation
Low R
DS (on)
HDMOS
TM
process
Mounting torque
Terminal connection torque
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
600
2
4.5
鹵200
T
J
= 25擄C
T
J
= 125擄C
100
2
75
V
V
nA
mA
mA
mW
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
V
DSS
V
GH(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 3 mA
V
DS
= V
GS
, I
D
= 8 mA
V
GS
=
鹵20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 鈥?I
D25
Pulse test, t
攏
300
ms,
duty cycle d
攏
2 %
Advantages
鈥?/div>
Easy to mount
鈥?/div>
鈥?/div>
Space savings
High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
98593B (7/00)
漏 2000 IXYS All rights reserved
1-2
IXFN60N60 產(chǎn)品屬性
10
半導(dǎo)體模塊
FET
HiPerFET™
MOSFET N 通道，金屬氧化物
標(biāo)準(zhǔn)型
600V
60A
75 毫歐 @ 500mA，10V
4.5V @ 8mA
380nC @ 10V
15000pF @ 25V
700W
底座安裝
SOT-227-4，miniBLOC
SOT-227B
管件
IXFN60N60相關(guān)型號(hào)PDF文件下載
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