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IXFN48N50Q Datasheet

  • IXFN48N50Q

  • HiPerFET Power MOSFETs Q-Class

  • 2頁

  • IXYS   IXYS

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HiPerFET
TM
Power MOSFETs
Q-Class
V
DSS
IXFN 44N50Q
IXFN 48N50Q
I
D25
R
DS(on)
500 V 44 A 120 mW
500 V 48 A 100 mW
t
rr
攏
250 ns
N-Channel Enhancement Mode
Avalanche Rated, Low Q
g
, High dv/dt
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
V
ISOL
M
d
Weight
Symbol
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1 MW
Continuous
Transient
T
C
= 25擄C
T
C
= 25擄C, pulse width limited by T
JM
T
C
= 25擄C
T
C
= 25擄C
I
S
攏
I
DM
, di/dt
攏
100 A/ms, V
DD
攏
V
DSS
,
T
J
攏
150擄C, R
G
= 2
W
T
C
= 25擄C
44N50
48N50
44N50
48N50
Maximum Ratings
500
500
鹵20
鹵30
44
48
176
192
48
60
2.5
5
500
-55 to +150
150
-55 to +150
V
V
V
V
A
A
A
A
A
mJ
mJ
V/ns
W
擄C
擄C
擄C
V~
V~
Nm/lb.in.
Nm/lb.in.
g
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
50/60 Hz, RMS
I
ISOL
攏
1 mA
t = 1 min
t=1s
2500
3000
1.5/13
1.5/13
30
Mounting torque
Terminal connection torque
Features
鈥?/div>
IXYS advanced low Q
g
process
鈥?/div>
Low gate charge and capacitances
- easier to drive
- faster switching
鈥?/div>
Unclamped Inductive Switching (UIS)
rated
鈥?/div>
Low R
DS (on)
鈥?/div>
Fast intrinsic diode
鈥?/div>
International standard package
鈥?/div>
miniBLOC with Aluminium nitride
isolation for low thermal resistance
鈥?/div>
Low terminal inductance (<10 nH) and
stray capacitance to heatsink (<35pf)
鈥?/div>
Molding epoxies meet UL 94 V-0
flammability classification
Applications
鈥?/div>
DC-DC converters
鈥?/div>
Battery chargers
鈥?/div>
Switched-mode and resonant-mode
power supplies
鈥?/div>
DC choppers
鈥?/div>
Temperature and lighting controls
Advantages
鈥?/div>
Easy to mount
鈥?/div>
Space savings
鈥?/div>
High power density
98715 (03/30/00)
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min.
typ.
max.
500
2.0
4.0
鹵100
T
J
= 25擄C
T
J
= 125擄C
100
2
120
100
V
V
nA
mA
mA
mW
mW
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
鹵20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 I
D25
44N50
48N50
Pulse test, t
攏
300
ms,
duty cycle d
攏
2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
漏 2000 IXYS All rights reserved
1-2

IXFN48N50Q 產(chǎn)品屬性

  • 10

  • 半導(dǎo)體模塊

  • FET

  • HiPerFET™

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 500V

  • 48A

  • 100 毫歐 @ 500mA，10V

  • 4V @ 4mA

  • 190nC @ 10V

  • 7000pF @ 25V

  • 500W

  • 底座安裝

  • SOT-227-4，miniBLOC

  • SOT-227B

  • 管件

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